Synthesis and microstructure of gallium phosphide nanowires

W. S. Shi; Y. F. Zheng; N. Wang; C. S. Lee; S. T. Lee

doi:10.1116/1.1382871

Synthesis and microstructure of gallium phosphide nanowires

W. S. Shi, Y. F. Zheng, N. Wang, C. S. Lee, S. T. Lee

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

84 Citations (Scopus)

Abstract

The oxide-assisted method via the laser ablation of a powder mixture of GaP and Ga₂O₃ was used to synthesize GaP nanowires about 22 nm in diameter and hundreds of micrometers in length. The growth of GaP nanowires was interpreted using the oxide-assisted mechanism involving several oxidation-reduction reactions. Two typical planar defects, stacking faults and twins, were observed in the GaP nanowires with some special morphologies. The formation of both kinds of planar defects was closely related to the variation of the morphologies of the nanowires from a straight and homogeneous one.

Original language	English
Pages (from-to)	1115-1118
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1382871
Publication status	Published - Jul 2001
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: 15 Oct 2000 → 18 Oct 2000

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title = "Synthesis and microstructure of gallium phosphide nanowires",

abstract = "The oxide-assisted method via the laser ablation of a powder mixture of GaP and Ga2O3 was used to synthesize GaP nanowires about 22 nm in diameter and hundreds of micrometers in length. The growth of GaP nanowires was interpreted using the oxide-assisted mechanism involving several oxidation-reduction reactions. Two typical planar defects, stacking faults and twins, were observed in the GaP nanowires with some special morphologies. The formation of both kinds of planar defects was closely related to the variation of the morphologies of the nanowires from a straight and homogeneous one.",

author = "Shi, {W. S.} and Zheng, {Y. F.} and N. Wang and Lee, {C. S.} and Lee, {S. T.}",

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T1 - Synthesis and microstructure of gallium phosphide nanowires

AU - Shi, W. S.

AU - Zheng, Y. F.

AU - Wang, N.

AU - Lee, C. S.

AU - Lee, S. T.

PY - 2001/7

Y1 - 2001/7

N2 - The oxide-assisted method via the laser ablation of a powder mixture of GaP and Ga2O3 was used to synthesize GaP nanowires about 22 nm in diameter and hundreds of micrometers in length. The growth of GaP nanowires was interpreted using the oxide-assisted mechanism involving several oxidation-reduction reactions. Two typical planar defects, stacking faults and twins, were observed in the GaP nanowires with some special morphologies. The formation of both kinds of planar defects was closely related to the variation of the morphologies of the nanowires from a straight and homogeneous one.

AB - The oxide-assisted method via the laser ablation of a powder mixture of GaP and Ga2O3 was used to synthesize GaP nanowires about 22 nm in diameter and hundreds of micrometers in length. The growth of GaP nanowires was interpreted using the oxide-assisted mechanism involving several oxidation-reduction reactions. Two typical planar defects, stacking faults and twins, were observed in the GaP nanowires with some special morphologies. The formation of both kinds of planar defects was closely related to the variation of the morphologies of the nanowires from a straight and homogeneous one.

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DO - 10.1116/1.1382871

M3 - RGC 21 - Publication in refereed journal

SN - 0734-211X

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SP - 1115

EP - 1118

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19)

Y2 - 15 October 2000 through 18 October 2000

ER -

Synthesis and microstructure of gallium phosphide nanowires

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