Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

Y. C. Chen; X. Y. Zhong; A. R. Konicek; D. S. Grierson; N. H. Tai; I. N. Lin; B. Kabius; J. M. Hiller; A. V. Sumant; R. W. Carpick; O. Auciello

doi:10.1063/1.2838303

Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

Y. C. Chen, X. Y. Zhong, A. R. Konicek, D. S. Grierson, N. H. Tai, I. N. Lin, B. Kabius, J. M. Hiller, A. V. Sumant, R. W. Carpick, O. Auciello^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

41 Citations (Scopus)

Abstract

This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H₂ /CH₄ gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/CH₄ chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

Original language	English
Article number	133113
Journal	Applied Physics Letters
Volume	92
Issue number	13
Online published	2 Apr 2008
DOIs	https://doi.org/10.1063/1.2838303
Publication status	Published - 2008
Externally published	Yes

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Chen, Y. C., Zhong, X. Y., Konicek, A. R., Grierson, D. S., Tai, N. H., Lin, I. N., Kabius, B., Hiller, J. M., Sumant, A. V., Carpick, R. W., & Auciello, O. (2008). Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth. Applied Physics Letters, 92(13), Article 133113. https://doi.org/10.1063/1.2838303

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title = "Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth",

abstract = "This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 /CH4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/CH4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships. ",

author = "Chen, {Y. C.} and Zhong, {X. Y.} and Konicek, {A. R.} and Grierson, {D. S.} and Tai, {N. H.} and Lin, {I. N.} and B. Kabius and Hiller, {J. M.} and Sumant, {A. V.} and Carpick, {R. W.} and O. Auciello",

year = "2008",

doi = "10.1063/1.2838303",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

AU - Chen, Y. C.

AU - Zhong, X. Y.

AU - Konicek, A. R.

AU - Grierson, D. S.

AU - Tai, N. H.

AU - Lin, I. N.

AU - Kabius, B.

AU - Hiller, J. M.

AU - Sumant, A. V.

AU - Carpick, R. W.

AU - Auciello, O.

PY - 2008

Y1 - 2008

N2 - This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 /CH4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/CH4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

AB - This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2 /CH4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/CH4 chemistries, with pure diamond nanograins (3-5 nm), but smoother surfaces (∼6 nm rms) and higher growth rate (∼1 μmh). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

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U2 - 10.1063/1.2838303

DO - 10.1063/1.2838303

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 133113

ER -

Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

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