TY - JOUR
T1 - Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture
AU - Yu, Xinge
AU - Zhou, Nanjia
AU - Smith, Jeremy
AU - Lin, Hui
AU - Stallings, Katie
AU - Yu, Junsheng
AU - Marks, Tobin J.
AU - Facchetti, Antonio
PY - 2013/8/28
Y1 - 2013/8/28
N2 - We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 C are ∼5tmex larger (∼2.6 cm2/(V s)) than those of single-layer IGO TFTs (∼0.5 cm2/(V s)), reaching values comparable to single-layer combustion-processed In2O3 TFTs (∼3.2 cm2/(V s)). More importantly, and unlike single-layer In2O3 TFTs, the threshold voltage of the bMO TFTs is ∼0.0 V, and the current on/off ratio is significantly enhanced to ∼1 × 108 (vs ∼1 × 104 for In2O3). The microstructure and morphology of the In 2O3/IGO bilayers are analyzed by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy, revealing the polycrystalline nature of the In2O3 layer and the amorphous nature of the IGO layer. This work demonstrates that solution-processed metal oxides can be implemented in bilayer TFT architectures with significantly enhanced performance.
AB - We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 C are ∼5tmex larger (∼2.6 cm2/(V s)) than those of single-layer IGO TFTs (∼0.5 cm2/(V s)), reaching values comparable to single-layer combustion-processed In2O3 TFTs (∼3.2 cm2/(V s)). More importantly, and unlike single-layer In2O3 TFTs, the threshold voltage of the bMO TFTs is ∼0.0 V, and the current on/off ratio is significantly enhanced to ∼1 × 108 (vs ∼1 × 104 for In2O3). The microstructure and morphology of the In 2O3/IGO bilayers are analyzed by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy, revealing the polycrystalline nature of the In2O3 layer and the amorphous nature of the IGO layer. This work demonstrates that solution-processed metal oxides can be implemented in bilayer TFT architectures with significantly enhanced performance.
KW - bilayer structure
KW - indium gallium oxide
KW - indium oxide
KW - thin film transistor (TFT)
UR - http://www.scopus.com/inward/record.url?scp=84883295234&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84883295234&origin=recordpage
U2 - 10.1021/am402065k
DO - 10.1021/am402065k
M3 - RGC 21 - Publication in refereed journal
C2 - 23876148
SN - 1944-8244
VL - 5
SP - 7983
EP - 7988
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 16
ER -