Synergies of Electrochemical Metallization and Valance Change in All-Inorganic Perovskite Quantum Dots for Resistive Switching

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Yan Wang
  • Ziyu Lv
  • Qiufan Liao
  • Haiquan Shan
  • Jinrui Chen
  • Ye Zhou
  • Li Zhou
  • Xiaoli Chen
  • Zhanpeng Wang
  • Zongxiang Xu
  • Yu-Jia Zeng
  • Su-Ting Han

Detail(s)

Original languageEnglish
Journal / PublicationAdvanced Materials
Volume30
Issue number28
Online published21 May 2018
Publication statusPublished - 12 Jul 2018

Abstract

The in-depth understanding of ions' generation and movement inside all-inorganic perovskite quantum dots (CsPbBr3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br- ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive-switching effects. Verified by field-emission scanning electron microscopy as well as energy-dispersive X-ray spectroscopy analysis, the resistive switching behavior of CsPbBr3 QD-based photonic resistive random-access memory (RRAM) is initiated by the electrochemical metallization and valance change. By coupling CsPbBr3 QD-based RRAM with a p-channel transistor, the novel application of an RRAM-gate field-effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all-inorganic perovskite QD-based photonic resistive memory for successful logic application.

Research Area(s)

  • Ion vacancy, Metal conductive filament, Perovskite, Quantum dots, RRAM

Citation Format(s)

Synergies of Electrochemical Metallization and Valance Change in All-Inorganic Perovskite Quantum Dots for Resistive Switching. / Wang, Yan; Lv, Ziyu; Liao, Qiufan; Shan, Haiquan; Chen, Jinrui; Zhou, Ye; Zhou, Li; Chen, Xiaoli; Roy, Vellaisamy A. L.; Wang, Zhanpeng; Xu, Zongxiang; Zeng, Yu-Jia; Han, Su-Ting.

In: Advanced Materials, Vol. 30, No. 28, 12.07.2018.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review