Surfaces of undoped and boron doped polycrystalline diamond films influenced by negative DC bias voltage

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

12 Scopus Citations
View graph of relations

Author(s)

  • Yiben Xia
  • Takashi Sekiguchi
  • Xin Jiang
  • Jianhua Ju
  • Linjun Wang
  • Takafumi Yao

Detail(s)

Original languageEnglish
Pages (from-to)1636-1639
Journal / PublicationDiamond and Related Materials
Volume9
Issue number9
Publication statusPublished - Sept 2000
Externally publishedYes

Conference

Title5th IUMRS International Conference on Advanced Materials (IUMRS-ICAM'99)
LocationBeijing International Convention Centre
PlaceChina
CityBeijing
Period13 - 18 June 1999

Abstract

The hydrogen ion bombardment is performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process, using only hydrogen as reactant gas. The size of (001) faces increases after hydrogen ion etching while other grains are etched off. The surfaces of [001]-oriented films after doping boron are investigated by scanning electron microscopy (SEM) and cathodoluminescent (CL) spectra. The absence of the band-A emission in the CL spectra means a low density of dislocation in the films. It is the first time that the peak at 741.5 nm and the broad peak at approximately 575 and 625 nm in the CL spectra were reduced efficiently after boron doping in (001) polycrystalline diamond films and to propose that these phenomena should be explained in simple terms with penetration of the lattice nets of the [001]-oriented faces model.

Citation Format(s)

Surfaces of undoped and boron doped polycrystalline diamond films influenced by negative DC bias voltage. / Xia, Yiben; Sekiguchi, Takashi; Zhang, Wenjun et al.
In: Diamond and Related Materials, Vol. 9, No. 9, 09.2000, p. 1636-1639.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review