Surface-nitrogenation-induced thermal conductivity attenuation in silicon nanowires
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 56007 |
Journal / Publication | EPL |
Volume | 96 |
Issue number | 5 |
Publication status | Published - Dec 2011 |
Link(s)
Abstract
Using molecular dynamics simulations, we have calculated the thermal conductivity of nitrogen-terminated silicon nanowires (SiNWs). We found that nitrogen adsorption can remarkably bring down the thermal conductivity of SiNWs. This nitrogenation-induced drop in thermal conductivity arises mainly from the phonon scattering by defects near the surface and the suppression of some vibrational modes. Our simulation results clearly demonstrate the importance of surface chemistry or functionalization in tuning the thermal conductivity, which has profound implications for thermoelectric applications of SiNWs. © Europhysics Letters Association.
Citation Format(s)
Surface-nitrogenation-induced thermal conductivity attenuation in silicon nanowires. / Li, H. P.; De Sarkar, Abir; Zhang, R. Q.
In: EPL, Vol. 96, No. 5, 56007, 12.2011.
In: EPL, Vol. 96, No. 5, 56007, 12.2011.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review