Surface-Controlled Metal Oxide Resistive Memory
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 7310859 |
| Pages (from-to) | 1307-1309 |
| Journal / Publication | IEEE Electron Device Letters |
| Volume | 36 |
| Issue number | 12 |
| Online published | 28 Oct 2015 |
| Publication status | Published - Dec 2015 |
| Externally published | Yes |
Link(s)
Abstract
To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM was studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage, and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and the uniformity of ReRAM and can serve as the guideline for developing practical device applications.
Research Area(s)
- oxygen chemisorption, resistive random-access memory, surface roughness, ZnO
Citation Format(s)
Surface-Controlled Metal Oxide Resistive Memory. / Ke, Jr-Jian; Namura, Kyoko; Retamal, José R.D. et al.
In: IEEE Electron Device Letters, Vol. 36, No. 12, 7310859, 12.2015, p. 1307-1309.
In: IEEE Electron Device Letters, Vol. 36, No. 12, 7310859, 12.2015, p. 1307-1309.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
