Skip to main navigation Skip to search Skip to main content

Surface treatment of polyethylene terephthalate using plasma ion implantation based on direct coupling of RF and high-voltage pulse

Chunzhi Gong, Xiubo Tian, Shiqin Yang, Ricky K. Y. Fu, Paul K. Chu

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Abstract

    Plasma immersion ion implantation employing hybrid radio-frequency (RF) and high-voltage (HV) pulses via a single feedthrough is an effective surface modification method. In this technique, the sample holder is connected to both the RF generator and the HV modulator in order to generate a high-density plasma in the vicinity of the sample. HV pulses are applied to the sample in between the RF pulses to conduct ion implantation. Polyethylene terephthalate (PET) samples weremodified using an C 2H 2 plasma generated by this technique, and diamond-like-carbon films were successfully deposited. In this process, the pulsed HV changed from 2.5 to 10 kV with an RF power ranging from 0 to 150 W and an RF of 13.56 MHz. The C 2H 2 gas pressure was maintained at 1.0 Pa with a processing time of 15 min. Cleaning effects were observed without arcing damage with increasing sample bias from 2.5 to 10 kV. The negative bias and RF were observed to influence the water contact angles of treated PET samples. The plasma-implanted surface became more hydrophilic with increasing sample bias and RF power, respectively. © 2012 IEEE.
    Original languageEnglish
    Article number6130605
    Pages (from-to)487-491
    JournalIEEE Transactions on Plasma Science
    Volume40
    Issue number2 PART 2
    DOIs
    Publication statusPublished - Feb 2012

    Research Keywords

    • Plasma immersion ion implantation (PIII)
    • Polyethylene terephthalate (PET)
    • Radio frequency (RF)
    • Water contact angle

    Fingerprint

    Dive into the research topics of 'Surface treatment of polyethylene terephthalate using plasma ion implantation based on direct coupling of RF and high-voltage pulse'. Together they form a unique fingerprint.

    Cite this