Surface segregation during deposition

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

5 Scopus Citations
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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)1793-1796
Journal / PublicationJournal of Applied Physics
Volume60
Issue number5
Publication statusPublished - 1 Sept 1986
Externally publishedYes

Abstract

Both the steady-state and transient solute (impurity) concentrations at the surface of a film during its deposition are calculated as a function of deposition rate, temperature, diffusivity, bulk film solute concentration, and segregation energy. The steady-state solute concentration at the surface is found to increase upon increasing either the solute diffusivity or the magnitude of the (negative) segregation energy, or upon decreasing the deposition rate. The transient concentration profile at the start of deposition relaxes toward the steady-state profile as 1/t. Implications of the present results for film growth mechanisms and methods to control the degree of segregation via manipulation of deposition parameters are discussed.

Citation Format(s)

Surface segregation during deposition. / Eykholt, R.; Srolovitz, D. J.
In: Journal of Applied Physics, Vol. 60, No. 5, 01.09.1986, p. 1793-1796.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review