Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 101-104 |
Journal / Publication | Thin Solid Films |
Volume | 567 |
Publication status | Published - 30 Sep 2014 |
Externally published | Yes |
Link(s)
Abstract
Surface photovoltage (SPV) spectra were measured for GaN 0.014As0.986 layers at room temperature and compared with room temperature photoreflectance (PR) and contactless electroreflectance (CER) measurements. Spectral features related to E- and E+ transitions were clearly observed in SPV spectra at energies corresponding to PR and CER resonances. In this way it has been shown that SPV spectroscopy is an alternative absorption-like technique to study both the E- and E + transitions in dilute nitrides. The observation of E+ transition in SPV spectra means that it is a direct optical transition at the Γ point of GaNAs band structure which can be explained by the band anticrossing interaction between the localized states of N and the extended conduction band states of the GaAs host. © 2014 Elsevier B.V.
Research Area(s)
- Contactless electroreflectance, Dilute nitrides, Photoreflectance, Surface photovoltage
Citation Format(s)
Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers. / Kudrawiec, R.; Sitarek, P.; Gladysiewicz, M.; Misiewicz, J.; He, Y.; Jin, Y.; Vardar, G.; Mintarov, A. M.; Merz, J. L.; Goldman, R. S.; Yu, K. M.; Walukiewicz, W.
In: Thin Solid Films, Vol. 567, 30.09.2014, p. 101-104.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review