Surface passivation and transfer doping of silicon nanowires
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Journal / Publication | Angewandte Chemie - International Edition |
Volume | 48 |
Issue number | 52 |
Publication status | Published - 21 Dec 2009 |
Link(s)
Abstract
Staying on top: Altering the surface of silicon nanowires (SiNWs) by terminating the surface with different species and/or introducing surface adsorbates can change the electrical properties of the SiNWs. Such easy, nondestructive conductivity modification would expand possible applications of SiNWs. © 2009 Wiley-VCH Verlag GmbH & Co. KGaA.
Research Area(s)
- Adsorption, Doping, Silicon nanowires, Surface passivation, Transport properties
Citation Format(s)
Surface passivation and transfer doping of silicon nanowires. / Guo, Chun-Sheng; Luo, Lin-Bao; Yuan, Guo-Dong et al.
In: Angewandte Chemie - International Edition, Vol. 48, No. 52, 21.12.2009.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review