SURFACE MODIFICATION OF METALS USING HIGH-FREQUENCY, LOW-VOLTAGE PLASMA IMMERSION ION IMPLANTATION

Xiubo Tian; Xiaofeng Wang; Songyan Wang; Baoyin Tang; Paul K. Chu

SURFACE MODIFICATION OF METALS USING HIGH-FREQUENCY, LOW-VOLTAGE PLASMA IMMERSION ION IMPLANTATION

Xiubo Tian
, Xiaofeng Wang
, Songyan Wang
, Baoyin Tang
, Paul K. Chu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Plasma immersion ion implantation (PIII) is a burgeoning surface modification technique and not restricted by the line-of-sight limitation plaguing conventional beam-line ion implantation. It is therefore an excellent technique to treat interior surfaces as well as components of a complex shape. To enhance the implant uniformity, we are utilizing a high-frequency, low-voltage process. The high dose rate and diffusion depth can be accomplished at a high pulsing frequency whereas the thinner sheath is more favorable to conformal implantation. In this paper, we will describe our hardware and experimental results. This high-frequency, low-voltage process increases the hardness of SS304 by nearly 65% and the wear track width is half of that of the unimplanted sample.

Original language	English
Title of host publication	Surface engineering : science and technology I
Subtitle of host publication	proceedings of the symposium sponsored by the Materials Processing and Manufacturing Division of The Minerals, Metals & Materials Society, held during the 1999 TMS Annual Meeting in San Diego, California, February 28-March 4, 1999
Editors	Ashok Kumar, Yip-Wah Chung, John J. Moore, John E. Smugeresky
Place of Publication	Warrendale, Pa.
Publisher	Minerals, Metals & Materials Society
Pages	177-184
ISBN (Print)	9780873394277
Publication status	Published - Feb 1999
Event	128th Annual Meeting & Exhibition of The Minerals, Metals & Materials Society (1999 TMS) - San Diego Convention Center, San Diego, United States Duration: 28 Feb 1999 → 4 Mar 1999 https://www.tms.org/Meetings/Annual-99/AnnMtg99Home.html https://www.tms.org/Meetings/Annual-99/Annual99-TechProgram.pdf

Conference

Conference	128th Annual Meeting & Exhibition of The Minerals, Metals & Materials Society (1999 TMS)
Abbreviated title	1999 TMS
Place	United States
City	San Diego
Period	28/02/99 → 4/03/99
Internet address	https://www.tms.org/Meetings/Annual-99/AnnMtg99Home.html https://www.tms.org/Meetings/Annual-99/Annual99-TechProgram.pdf

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Tian, X., Wang, X., Wang, S., Tang, B., & Chu, P. K. (1999). SURFACE MODIFICATION OF METALS USING HIGH-FREQUENCY, LOW-VOLTAGE PLASMA IMMERSION ION IMPLANTATION. In A. Kumar, Y.-W. Chung, J. J. Moore, & J. E. Smugeresky (Eds.), Surface engineering : science and technology I: proceedings of the symposium sponsored by the Materials Processing and Manufacturing Division of The Minerals, Metals & Materials Society, held during the 1999 TMS Annual Meeting in San Diego, California, February 28-March 4, 1999 (pp. 177-184). Minerals, Metals & Materials Society.

Tian, Xiubo ; Wang, Xiaofeng ; Wang, Songyan et al. / SURFACE MODIFICATION OF METALS USING HIGH-FREQUENCY, LOW-VOLTAGE PLASMA IMMERSION ION IMPLANTATION. Surface engineering : science and technology I: proceedings of the symposium sponsored by the Materials Processing and Manufacturing Division of The Minerals, Metals & Materials Society, held during the 1999 TMS Annual Meeting in San Diego, California, February 28-March 4, 1999. editor / Ashok Kumar ; Yip-Wah Chung ; John J. Moore ; John E. Smugeresky. Warrendale, Pa. : Minerals, Metals & Materials Society, 1999. pp. 177-184

@inproceedings{2b03792d7dcc4bf0ba7624fe962355a3,

title = "SURFACE MODIFICATION OF METALS USING HIGH-FREQUENCY, LOW-VOLTAGE PLASMA IMMERSION ION IMPLANTATION",

abstract = "Plasma immersion ion implantation (PIII) is a burgeoning surface modification technique and not restricted by the line-of-sight limitation plaguing conventional beam-line ion implantation. It is therefore an excellent technique to treat interior surfaces as well as components of a complex shape. To enhance the implant uniformity, we are utilizing a high-frequency, low-voltage process. The high dose rate and diffusion depth can be accomplished at a high pulsing frequency whereas the thinner sheath is more favorable to conformal implantation. In this paper, we will describe our hardware and experimental results. This high-frequency, low-voltage process increases the hardness of SS304 by nearly 65\% and the wear track width is half of that of the unimplanted sample.",

author = "Xiubo Tian and Xiaofeng Wang and Songyan Wang and Baoyin Tang and Chu, \{Paul K.\}",

year = "1999",

month = feb,

language = "English",

isbn = "9780873394277",

pages = "177--184",

editor = "Ashok Kumar and Yip-Wah Chung and Moore, \{John J.\} and Smugeresky, \{John E.\}",

booktitle = "Surface engineering : science and technology I",

publisher = "Minerals, Metals \& Materials Society",

address = "United States",

note = "128th Annual Meeting \& Exhibition of The Minerals, Metals \& Materials Society (1999 TMS), 1999 TMS ; Conference date: 28-02-1999 Through 04-03-1999",

url = "https://www.tms.org/Meetings/Annual-99/AnnMtg99Home.html, https://www.tms.org/Meetings/Annual-99/Annual99-TechProgram.pdf",

}

Tian, X, Wang, X, Wang, S, Tang, B & Chu, PK 1999, SURFACE MODIFICATION OF METALS USING HIGH-FREQUENCY, LOW-VOLTAGE PLASMA IMMERSION ION IMPLANTATION. in A Kumar, Y-W Chung, JJ Moore & JE Smugeresky (eds), Surface engineering : science and technology I: proceedings of the symposium sponsored by the Materials Processing and Manufacturing Division of The Minerals, Metals & Materials Society, held during the 1999 TMS Annual Meeting in San Diego, California, February 28-March 4, 1999. Minerals, Metals & Materials Society, Warrendale, Pa., pp. 177-184, 128th Annual Meeting & Exhibition of The Minerals, Metals & Materials Society (1999 TMS), San Diego, California, United States, 28/02/99.

SURFACE MODIFICATION OF METALS USING HIGH-FREQUENCY, LOW-VOLTAGE PLASMA IMMERSION ION IMPLANTATION. / Tian, Xiubo; Wang, Xiaofeng; Wang, Songyan et al.
Surface engineering : science and technology I: proceedings of the symposium sponsored by the Materials Processing and Manufacturing Division of The Minerals, Metals & Materials Society, held during the 1999 TMS Annual Meeting in San Diego, California, February 28-March 4, 1999. ed. / Ashok Kumar; Yip-Wah Chung; John J. Moore; John E. Smugeresky. Warrendale, Pa.: Minerals, Metals & Materials Society, 1999. p. 177-184.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - SURFACE MODIFICATION OF METALS USING HIGH-FREQUENCY, LOW-VOLTAGE PLASMA IMMERSION ION IMPLANTATION

AU - Tian, Xiubo

AU - Wang, Xiaofeng

AU - Wang, Songyan

AU - Tang, Baoyin

AU - Chu, Paul K.

PY - 1999/2

Y1 - 1999/2

N2 - Plasma immersion ion implantation (PIII) is a burgeoning surface modification technique and not restricted by the line-of-sight limitation plaguing conventional beam-line ion implantation. It is therefore an excellent technique to treat interior surfaces as well as components of a complex shape. To enhance the implant uniformity, we are utilizing a high-frequency, low-voltage process. The high dose rate and diffusion depth can be accomplished at a high pulsing frequency whereas the thinner sheath is more favorable to conformal implantation. In this paper, we will describe our hardware and experimental results. This high-frequency, low-voltage process increases the hardness of SS304 by nearly 65% and the wear track width is half of that of the unimplanted sample.

AB - Plasma immersion ion implantation (PIII) is a burgeoning surface modification technique and not restricted by the line-of-sight limitation plaguing conventional beam-line ion implantation. It is therefore an excellent technique to treat interior surfaces as well as components of a complex shape. To enhance the implant uniformity, we are utilizing a high-frequency, low-voltage process. The high dose rate and diffusion depth can be accomplished at a high pulsing frequency whereas the thinner sheath is more favorable to conformal implantation. In this paper, we will describe our hardware and experimental results. This high-frequency, low-voltage process increases the hardness of SS304 by nearly 65% and the wear track width is half of that of the unimplanted sample.

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9780873394277

SP - 177

EP - 184

BT - Surface engineering : science and technology I

A2 - Kumar, Ashok

A2 - Chung, Yip-Wah

A2 - Moore, John J.

A2 - Smugeresky, John E.

PB - Minerals, Metals & Materials Society

CY - Warrendale, Pa.

T2 - 128th Annual Meeting & Exhibition of The Minerals, Metals & Materials Society (1999 TMS)

Y2 - 28 February 1999 through 4 March 1999

ER -

Tian X, Wang X, Wang S, Tang B, Chu PK. SURFACE MODIFICATION OF METALS USING HIGH-FREQUENCY, LOW-VOLTAGE PLASMA IMMERSION ION IMPLANTATION. In Kumar A, Chung YW, Moore JJ, Smugeresky JE, editors, Surface engineering : science and technology I: proceedings of the symposium sponsored by the Materials Processing and Manufacturing Division of The Minerals, Metals & Materials Society, held during the 1999 TMS Annual Meeting in San Diego, California, February 28-March 4, 1999. Warrendale, Pa.: Minerals, Metals & Materials Society. 1999. p. 177-184

SURFACE MODIFICATION OF METALS USING HIGH-FREQUENCY, LOW-VOLTAGE PLASMA IMMERSION ION IMPLANTATION

Abstract

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