Surface-enhanced Raman characteristics of Ag cap aggregates on silicon nanowire arrays

A convenient nanotechnique is used to place analyte molecules between closely spaced silver-capped Si nanowires for investigating surface-enhanced Raman scattering (SERS). It is revealed that the SERS intensity (orsensitivity) is closely related to the etching time used to prepare the Si nanowires from wafer. As the etching leaves the nominal spacing between the nanowires unaffected, the observed effect can be explained based on different gaps between the Ag particles due to the different lengths of the Si nanowires. Large SERS intensity for short etching times can be elucidated in terms of the rigidity of the nanowires and the smaller SERS intensities for longer etching times can be explained by considering the bending of nanowires and the agglomeration of the Ag caps due to gravity and van der Waals forces. © 2006 IOP Publishing Ltd.