Surface effects of electrode-dependent switching behavior of resistive random-access memory

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Jr-Jian Ke
  • Tzu-Chiao Wei
  • Dung-Sheng Tsai
  • Chun-Ho Lin
  • Jr-Hau He

Detail(s)

Original languageEnglish
Article number131603
Journal / PublicationApplied Physics Letters
Volume109
Issue number13
Publication statusPublished - 26 Sep 2016
Externally publishedYes

Abstract

The surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device's switching functionality. A thermodynamic model of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy for the chemisorption process, resulting in a better resistive switching performance. These findings provide an in-depth understanding of electrode-dependent switching behaviors and can serve as design guidelines for future ReRAM devices.

Citation Format(s)

Surface effects of electrode-dependent switching behavior of resistive random-access memory. / Ke, Jr-Jian; Wei, Tzu-Chiao; Tsai, Dung-Sheng; Lin, Chun-Ho; He, Jr-Hau.

In: Applied Physics Letters, Vol. 109, No. 13, 131603, 26.09.2016.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review