Surface effect on resistive switching behaviors of ZnO

Jr-Jian Ke; Zi-Jheng Liu; Chen-Fang Kang; Su-Jien Lin; Jr-Hau He

doi:10.1063/1.3659296

Surface effect on resistive switching behaviors of ZnO

Jr-Jian Ke, Zi-Jheng Liu, Chen-Fang Kang, Su-Jien Lin, Jr-Hau He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

65 Citations (Scopus)

Abstract

The interaction between chemisorbed oxygen adatoms (O₂‾_(ad)) and oxygen vacancies associated with the formation/rupture of conductive filaments dominates the switching yield of ZnO, which is also confirmed by the fact that the reduction of SET/RESET voltage with the temperature. The pronounced surface effect-induced conductivity lowering due to O₂‾_(ad) chemisorption leads to increased resistance of high resistance state (HRS). The current decay of the HRS with increased temperatures/times is owing to the severe O₂‾_(ad) chemisorption as Joule heating is continuously applied. The statistical analysis for over 400 cells provides essential evidence for evaluating the surface effect on resistive switching.

Original language	English
Article number	192106
Journal	Applied Physics Letters
Volume	99
Issue number	19
DOIs	https://doi.org/10.1063/1.3659296
Publication status	Published - 7 Nov 2011
Externally published	Yes

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title = "Surface effect on resistive switching behaviors of ZnO",

abstract = "The interaction between chemisorbed oxygen adatoms (O2‾(ad)) and oxygen vacancies associated with the formation/rupture of conductive filaments dominates the switching yield of ZnO, which is also confirmed by the fact that the reduction of SET/RESET voltage with the temperature. The pronounced surface effect-induced conductivity lowering due to O2‾(ad) chemisorption leads to increased resistance of high resistance state (HRS). The current decay of the HRS with increased temperatures/times is owing to the severe O2‾(ad) chemisorption as Joule heating is continuously applied. The statistical analysis for over 400 cells provides essential evidence for evaluating the surface effect on resistive switching.",

author = "Jr-Jian Ke and Zi-Jheng Liu and Chen-Fang Kang and Su-Jien Lin and Jr-Hau He",

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T1 - Surface effect on resistive switching behaviors of ZnO

AU - Ke, Jr-Jian

AU - Liu, Zi-Jheng

AU - Kang, Chen-Fang

AU - Lin, Su-Jien

AU - He, Jr-Hau

PY - 2011/11/7

Y1 - 2011/11/7

N2 - The interaction between chemisorbed oxygen adatoms (O2‾(ad)) and oxygen vacancies associated with the formation/rupture of conductive filaments dominates the switching yield of ZnO, which is also confirmed by the fact that the reduction of SET/RESET voltage with the temperature. The pronounced surface effect-induced conductivity lowering due to O2‾(ad) chemisorption leads to increased resistance of high resistance state (HRS). The current decay of the HRS with increased temperatures/times is owing to the severe O2‾(ad) chemisorption as Joule heating is continuously applied. The statistical analysis for over 400 cells provides essential evidence for evaluating the surface effect on resistive switching.

AB - The interaction between chemisorbed oxygen adatoms (O2‾(ad)) and oxygen vacancies associated with the formation/rupture of conductive filaments dominates the switching yield of ZnO, which is also confirmed by the fact that the reduction of SET/RESET voltage with the temperature. The pronounced surface effect-induced conductivity lowering due to O2‾(ad) chemisorption leads to increased resistance of high resistance state (HRS). The current decay of the HRS with increased temperatures/times is owing to the severe O2‾(ad) chemisorption as Joule heating is continuously applied. The statistical analysis for over 400 cells provides essential evidence for evaluating the surface effect on resistive switching.

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U2 - 10.1063/1.3659296

DO - 10.1063/1.3659296

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192106

ER -

Surface effect on resistive switching behaviors of ZnO

Abstract

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