Surface effect on resistive switching behaviors of ZnO

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Jr-Jian Ke
  • Zi-Jheng Liu
  • Chen-Fang Kang
  • Su-Jien Lin
  • Jr-Hau He

Detail(s)

Original languageEnglish
Article number192106
Journal / PublicationApplied Physics Letters
Volume99
Issue number19
Publication statusPublished - 7 Nov 2011
Externally publishedYes

Abstract

The interaction between chemisorbed oxygen adatoms (O2(ad)) and oxygen vacancies associated with the formation/rupture of conductive filaments dominates the switching yield of ZnO, which is also confirmed by the fact that the reduction of SET/RESET voltage with the temperature. The pronounced surface effect-induced conductivity lowering due to O2(ad) chemisorption leads to increased resistance of high resistance state (HRS). The current decay of the HRS with increased temperatures/times is owing to the severe O2(ad) chemisorption as Joule heating is continuously applied. The statistical analysis for over 400 cells provides essential evidence for evaluating the surface effect on resistive switching.

Citation Format(s)

Surface effect on resistive switching behaviors of ZnO. / Ke, Jr-Jian; Liu, Zi-Jheng; Kang, Chen-Fang; Lin, Su-Jien; He, Jr-Hau.

In: Applied Physics Letters, Vol. 99, No. 19, 192106, 07.11.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review