Surface doping of nitrogen atoms on graphene via molecular precursor

Guo Hong; Qi-Hui Wu; Chundong Wang; Jianguo Ren; Tingting Xu; Wenjun Zhang; Shuit-Tong Lee

doi:10.1063/1.4790573

Surface doping of nitrogen atoms on graphene via molecular precursor

Guo Hong
, Qi-Hui Wu
, Chundong Wang
, Jianguo Ren
, Tingting Xu
, Wenjun Zhang
, Shuit-Tong Lee^*

^*Corresponding author for this work

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

16 Citations (Scopus)

31 Downloads (CityUHK Scholars)

Abstract

Surface doping can be a powerful way to modify the electronic properties of graphene with the unique potential to retain the excellent pristine properties of graphene. Here, we report an atomic surface doping method for graphene via dissociation of adsorbed precursor molecules of tetrafluorotetracyanoquinodimethane (F₄-TCNQ) induced by hydrogen plasma treatment. Significantly, the location of the dopant N atoms can be pre-determined by the location and orientation of the F₄-TCNQ molecule precursor on graphene, leading in principle to site-selective doping. Furthermore, the molecular precursor is stable under ambient conditions, satisfying an important consideration for patterning processes. © 2013 American Institute of Physics.

Original language	English
Article number	051610
Journal	Applied Physics Letters
Volume	102
Issue number	5
DOIs	https://doi.org/10.1063/1.4790573
Publication status	Published - 4 Feb 2013

Publisher's Copyright Statement

COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Guo Hong, Qi-Hui Wu, Chundong Wang, Jianguo Ren, Tingting Xu, Wenjun Zhang, and Shuit-Tong Lee , "Surface doping of nitrogen atoms on graphene via molecular precursor", Appl. Phys. Lett. 102, 051610 (2013) and may be found at https://doi.org/10.1063/1.4790573.

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T1 - Surface doping of nitrogen atoms on graphene via molecular precursor

AU - Hong, Guo

AU - Wu, Qi-Hui

AU - Wang, Chundong

AU - Ren, Jianguo

AU - Xu, Tingting

AU - Zhang, Wenjun

AU - Lee, Shuit-Tong

PY - 2013/2/4

Y1 - 2013/2/4

N2 - Surface doping can be a powerful way to modify the electronic properties of graphene with the unique potential to retain the excellent pristine properties of graphene. Here, we report an atomic surface doping method for graphene via dissociation of adsorbed precursor molecules of tetrafluorotetracyanoquinodimethane (F4-TCNQ) induced by hydrogen plasma treatment. Significantly, the location of the dopant N atoms can be pre-determined by the location and orientation of the F4-TCNQ molecule precursor on graphene, leading in principle to site-selective doping. Furthermore, the molecular precursor is stable under ambient conditions, satisfying an important consideration for patterning processes. © 2013 American Institute of Physics.

AB - Surface doping can be a powerful way to modify the electronic properties of graphene with the unique potential to retain the excellent pristine properties of graphene. Here, we report an atomic surface doping method for graphene via dissociation of adsorbed precursor molecules of tetrafluorotetracyanoquinodimethane (F4-TCNQ) induced by hydrogen plasma treatment. Significantly, the location of the dopant N atoms can be pre-determined by the location and orientation of the F4-TCNQ molecule precursor on graphene, leading in principle to site-selective doping. Furthermore, the molecular precursor is stable under ambient conditions, satisfying an important consideration for patterning processes. © 2013 American Institute of Physics.

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U2 - 10.1063/1.4790573

DO - 10.1063/1.4790573

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051610

ER -

Surface doping of nitrogen atoms on graphene via molecular precursor

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