Surface damage in III-V devices by dry etching

S. W. Pang

Surface damage in III-V devices by dry etching

S. W. Pang

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

6 Citations (Scopus)

Abstract

The plasma-induced near-surface damage in III-V based devices was examined. Surface defects can be minimized by using low ion energy and high ion flux for etching. An effective way to remove surface damage is by etching or passivating the etched surface with low energy chlorine species. Surface damage for in-plane gated (IPG) quantum wire transistors and heterostructure bipolar transistors (HBT) can be reduced substantially by surface passivation or by etching with a two-step approach.

Original language	English
Title of host publication	International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
Publisher	IEEE
Pages	50-55
Publication status	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA Duration: 4 Jun 1998 → 5 Jun 1998

Conference

Conference	Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID
City	Honolulu, HI, USA
Period	4/06/98 → 5/06/98

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title = "Surface damage in III-V devices by dry etching",

abstract = "The plasma-induced near-surface damage in III-V based devices was examined. Surface defects can be minimized by using low ion energy and high ion flux for etching. An effective way to remove surface damage is by etching or passivating the etched surface with low energy chlorine species. Surface damage for in-plane gated (IPG) quantum wire transistors and heterostructure bipolar transistors (HBT) can be reduced substantially by surface passivation or by etching with a two-step approach.",

author = "Pang, \{S. W.\}",

year = "1998",

language = "English",

pages = "50--55",

booktitle = "International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings",

publisher = "IEEE",

address = "United States",

note = "Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID ; Conference date: 04-06-1998 Through 05-06-1998",

}

TY - GEN

T1 - Surface damage in III-V devices by dry etching

AU - Pang, S. W.

PY - 1998

Y1 - 1998

N2 - The plasma-induced near-surface damage in III-V based devices was examined. Surface defects can be minimized by using low ion energy and high ion flux for etching. An effective way to remove surface damage is by etching or passivating the etched surface with low energy chlorine species. Surface damage for in-plane gated (IPG) quantum wire transistors and heterostructure bipolar transistors (HBT) can be reduced substantially by surface passivation or by etching with a two-step approach.

AB - The plasma-induced near-surface damage in III-V based devices was examined. Surface defects can be minimized by using low ion energy and high ion flux for etching. An effective way to remove surface damage is by etching or passivating the etched surface with low energy chlorine species. Surface damage for in-plane gated (IPG) quantum wire transistors and heterostructure bipolar transistors (HBT) can be reduced substantially by surface passivation or by etching with a two-step approach.

UR - https://www.scopus.com/pages/publications/0032255682

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032255682&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

SP - 50

EP - 55

BT - International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

PB - IEEE

T2 - Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID

Y2 - 4 June 1998 through 5 June 1998

ER -

Surface damage in III-V devices by dry etching

Abstract

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