Surface conductivity in antiferromagnetic semiconductor CrSb2
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | 043085 |
| Journal / Publication | Physical Review Research |
| Volume | 2 |
| Issue number | 4 |
| Online published | 16 Oct 2020 |
| Publication status | Published - Oct 2020 |
| Externally published | Yes |
Link(s)
| DOI | DOI |
|---|---|
| Attachment(s) | Documents
Publisher's Copyright Statement
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| Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-85115903357&origin=recordpage |
| Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(9846f2a0-ca11-4c05-a922-7562476dc263).html |
Abstract
The contribution of bulk and surface to the electrical resistance along crystallographic b and c axes as a function of crystal thickness gives evidence for a temperature independent surface states in an antiferromagnetic narrow-gap semiconductor CrSb2. ARPES shows a clear electron-like pocket at Γ-Z direction which is absent in the bulk band structure. First-principles calculations also confirm the existence of metallic surface states inside the bulk gap. Whereas combined experimental probes point to enhanced surface conduction similar to topological insulators, surface states are trivial since CrSb2 exhibits no band inversion.
Research Area(s)
Citation Format(s)
Surface conductivity in antiferromagnetic semiconductor CrSb2. / Du, Qianheng; Fu, Huixia; Ma, Junzhang et al.
In: Physical Review Research, Vol. 2, No. 4, 043085, 10.2020.
In: Physical Review Research, Vol. 2, No. 4, 043085, 10.2020.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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