Surface conductivity in antiferromagnetic semiconductor CrSb2

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Qianheng Du
  • Huixia Fu
  • A. Chikina
  • M. Radovic
  • Binghai Yan
  • C. Petrovic

Detail(s)

Original languageEnglish
Article number043085
Journal / PublicationPhysical Review Research
Volume2
Issue number4
Online published16 Oct 2020
Publication statusPublished - Oct 2020
Externally publishedYes

Link(s)

Abstract

The contribution of bulk and surface to the electrical resistance along crystallographic b and c axes as a function of crystal thickness gives evidence for a temperature independent surface states in an antiferromagnetic narrow-gap semiconductor CrSb2. ARPES shows a clear electron-like pocket at Γ-Z direction which is absent in the bulk band structure. First-principles calculations also confirm the existence of metallic surface states inside the bulk gap. Whereas combined experimental probes point to enhanced surface conduction similar to topological insulators, surface states are trivial since CrSb2 exhibits no band inversion.

Research Area(s)

Citation Format(s)

Surface conductivity in antiferromagnetic semiconductor CrSb2. / Du, Qianheng; Fu, Huixia; Ma, Junzhang; Chikina, A.; Radovic, M.; Yan, Binghai; Petrovic, C.

In: Physical Review Research, Vol. 2, No. 4, 043085, 10.2020.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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