Surface chemistry of CVD diamond : linking the nanoscale and mesoscale modelling hierarchies

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • I. I. Oleinik
  • D. G. Pettifor
  • A. P. Sutton
  • C. C. Battaile
  • J. E. Butler

Detail(s)

Original languageEnglish
Pages (from-to)275-284
Journal / PublicationMaterials Research Society Symposium - Proceedings
Volume538
Publication statusPublished - 1998
Externally publishedYes

Conference

TitleProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'
CityBoston, MA, USA
Period30 November - 3 December 1998

Abstract

The β-scission growth mechanism at the diamond (100)(2×1) surface is studied by a combination of nanoscale ab-initio LDA/GGA and semiempirical tight-binding techniques to provide the necessary input into the mesoscale variable time step Kinetic Monte-Carlo (KMC) simulations of CVD diamond growth. The reaction path of the beta-scission reaction is critically examined and the activation barrier of the reverse etching of the methylene adsorbate is deduced. Our quantum mechanical calculations support a previous semiempirical PM3 study confirming that the molecular mechanics values for the enthalpy of the reaction are a factor of 2 wrong. This conclusion provides strong support for the preferential etching mechanism introduced into KMC to predict experimentally measured growth rates.

Citation Format(s)

Surface chemistry of CVD diamond: linking the nanoscale and mesoscale modelling hierarchies. / Oleinik, I. I.; Pettifor, D. G.; Sutton, A. P. et al.
In: Materials Research Society Symposium - Proceedings, Vol. 538, 1998, p. 275-284.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review