Suppression of the photoluminescence quenching effect in self-assembled InAs/GaAs quantum dots

N. V. Baidus; A. Chahboun; M. J M Gomes; M. I. Vasilevskiy; P. B. Demina; E. A. Uskova; B. N. Zvonkov

doi:10.1063/1.2006978

Author(s)

N. V. Baidus
A. Chahboun
M. J M Gomes
M. I. Vasilevskiy
P. B. Demina
And 2 others

E. A. Uskova
B. N. Zvonkov

Detail(s)

Original language	English
Article number	53109
Journal / Publication	Applied Physics Letters
Volume	87
Issue number	5
Publication status	Published - 2005
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.2006978 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-33645523442&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(2ff8c134-51e1-4646-9ba5-c2a54b307f25).html

Abstract

We report results that witness the possibility of controlling the temperature (T) dependence of the photoluminescence (PL) from self-assembled InAs/GaAs quantum dots (QDs) overgrown by an In_xGa_1-xAs layer forming a quantum well. A growth treatment using tetrachloromethane eliminates the quenching of the PL intensity at room temperature. A reduction in the concentration of defects in the GaAs matrix and the corresponding increase of the radiative lifetime of the photocarriers are invoked to explain this effect. A simple model analyzing the behavior of the quasi-Fermi level in the QD heterostructure confirms our explanation. © 2005 American Institute of Physics.

Citation Format(s)

[ RIS ] [ BibTeX ]

Suppression of the photoluminescence quenching effect in self-assembled InAs/GaAs quantum dots. / Baidus, N. V.; Chahboun, A.; Gomes, M. J M et al.

In: Applied Physics Letters, Vol. 87, No. 5, 53109, 2005.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Baidus, NV, Chahboun, A, Gomes, MJM, Vasilevskiy, MI, Demina, PB, Uskova, EA & Zvonkov, BN 2005, 'Suppression of the photoluminescence quenching effect in self-assembled InAs/GaAs quantum dots', Applied Physics Letters, vol. 87, no. 5, 53109. https://doi.org/10.1063/1.2006978

Baidus, N. V., Chahboun, A., Gomes, M. J. M., Vasilevskiy, M. I., Demina, P. B., Uskova, E. A., & Zvonkov, B. N. (2005). Suppression of the photoluminescence quenching effect in self-assembled InAs/GaAs quantum dots. Applied Physics Letters, 87(5), [53109]. https://doi.org/10.1063/1.2006978

Baidus NV, Chahboun A, Gomes MJM, Vasilevskiy MI, Demina PB, Uskova EA et al. Suppression of the photoluminescence quenching effect in self-assembled InAs/GaAs quantum dots. Applied Physics Letters. 2005;87(5):53109. doi: 10.1063/1.2006978

Baidus, N. V. ; Chahboun, A. ; Gomes, M. J M et al. / Suppression of the photoluminescence quenching effect in self-assembled InAs/GaAs quantum dots. In: Applied Physics Letters. 2005 ; Vol. 87, No. 5.