TY - JOUR
T1 - Subwavelength Si nanowire arrays for self-cleaning antireflection coatings
AU - Dai, Yu-An
AU - Chang, Hung-Chih
AU - Lai, Kun-Yu
AU - Lin, Chin-An
AU - Chung, Ren-Jei
AU - Lin, Gong-Ru
AU - He, Jr-Hau
PY - 2010/12/28
Y1 - 2010/12/28
N2 - Galvanic wet etching was adopted to fabricate Si nanowire arrays (NWAs) as a near-perfect subwavelength structure (SWS), which is an optically effective gradient-index antireflection (AR) surface and also exhibits super-hydrophobicity with an extremely high water contact angle (159°). Fresnel reflection and diffuse reflection over the broad spectrum can be eliminated by a Si NWA AR coating. Moreover, Si NWA SWSs show polarization-independent and omnidirectional AR properties. The wavelength-averaged specular and diffuse reflectance of Si NWA SWSs are as low as 0.06% and 2.51%, respectively. The effects of the surface profile of this biomimetic SWS on the AR and super-hydrophobic properties were investigated systematically.
AB - Galvanic wet etching was adopted to fabricate Si nanowire arrays (NWAs) as a near-perfect subwavelength structure (SWS), which is an optically effective gradient-index antireflection (AR) surface and also exhibits super-hydrophobicity with an extremely high water contact angle (159°). Fresnel reflection and diffuse reflection over the broad spectrum can be eliminated by a Si NWA AR coating. Moreover, Si NWA SWSs show polarization-independent and omnidirectional AR properties. The wavelength-averaged specular and diffuse reflectance of Si NWA SWSs are as low as 0.06% and 2.51%, respectively. The effects of the surface profile of this biomimetic SWS on the AR and super-hydrophobic properties were investigated systematically.
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U2 - 10.1039/c0jm00524j
DO - 10.1039/c0jm00524j
M3 - RGC 21 - Publication in refereed journal
SN - 0959-9428
VL - 20
SP - 10924
EP - 10930
JO - Journal of Materials Chemistry
JF - Journal of Materials Chemistry
IS - 48
ER -