Sub-volt silicon-organic electro-optic modulator with 500 MHz bandwidth

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Ran Ding
  • Tom Baehr-Jones
  • Woo-Joong Kim
  • Alexander Spott
  • Maryse Fournier
  • Jean-Marc Fedeli
  • Su Huang
  • Larry Dalton
  • Michael Hochberg

Detail(s)

Original languageEnglish
Pages (from-to)1112-1117
Journal / PublicationJournal of Lightwave Technology
Volume29
Issue number8
Online published3 Mar 2011
Publication statusPublished - 15 Apr 2011
Externally publishedYes

Abstract

Lowering the operating voltage of electro-optic modulators is desirable for a variety of applications, most notably in analog photonics and digital data communication. In particular for digital systems such as CPUs, it is desirable to develop modulators that are both temperature-insensitive and compatible with typically sub-2 V CMOS electronics; however, drive voltages in silicon-based MachZehnder interferometers (MZIs) currently exceed 1.8 V. Here, we show an MZI modulator based on an electro-optic polymer-clad silicon slot waveguide, with a halfwave voltage of only 0.69 V (corresponding to a 0.62 V(̇) cm modulation figure of merit), and a bandwidth of 500 MHz. We also show that there are paths to significantly improve both the bandwidth and drive voltage.

Research Area(s)

  • Electro-optic modulation, integrated optics, optical polymers, silicon-on-insulator technology

Citation Format(s)

Sub-volt silicon-organic electro-optic modulator with 500 MHz bandwidth. / Ding, Ran; Baehr-Jones, Tom; Kim, Woo-Joong; Spott, Alexander; Fournier, Maryse; Fedeli, Jean-Marc; Huang, Su; Luo, Jingdong; Jen, Alex K.-Y.; Dalton, Larry; Hochberg, Michael.

In: Journal of Lightwave Technology, Vol. 29, No. 8, 15.04.2011, p. 1112-1117.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review