Sub-volt silicon-organic electro-optic modulator with 500 MHz bandwidth
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1112-1117 |
| Journal / Publication | Journal of Lightwave Technology |
| Volume | 29 |
| Issue number | 8 |
| Online published | 3 Mar 2011 |
| Publication status | Published - 15 Apr 2011 |
| Externally published | Yes |
Link(s)
Abstract
Lowering the operating voltage of electro-optic modulators is desirable for a variety of applications, most notably in analog photonics and digital data communication. In particular for digital systems such as CPUs, it is desirable to develop modulators that are both temperature-insensitive and compatible with typically sub-2 V CMOS electronics; however, drive voltages in silicon-based MachZehnder interferometers (MZIs) currently exceed 1.8 V. Here, we show an MZI modulator based on an electro-optic polymer-clad silicon slot waveguide, with a halfwave voltage of only 0.69 V (corresponding to a 0.62 V(̇) cm modulation figure of merit), and a bandwidth of 500 MHz. We also show that there are paths to significantly improve both the bandwidth and drive voltage.
Research Area(s)
- Electro-optic modulation, integrated optics, optical polymers, silicon-on-insulator technology
Citation Format(s)
Sub-volt silicon-organic electro-optic modulator with 500 MHz bandwidth. / Ding, Ran; Baehr-Jones, Tom; Kim, Woo-Joong et al.
In: Journal of Lightwave Technology, Vol. 29, No. 8, 15.04.2011, p. 1112-1117.
In: Journal of Lightwave Technology, Vol. 29, No. 8, 15.04.2011, p. 1112-1117.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
