Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices

Zhi Cui; Juin J. Liou; Yun Yue; Hei Wong

doi:10.1016/j.sse.2004.11.020

Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices

Zhi Cui, Juin J. Liou, Yun Yue, Hei Wong

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

12 Citations (Scopus)

Abstract

Experimental results are presented to indicate that the widely used power-law models for lifetime estimation are questionable for deep-submicron (

Original language	English
Pages (from-to)	505-511
Journal	Solid-State Electronics
Volume	49
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2004.11.020
Publication status	Published - Mar 2005

Research Keywords

Gate current
Lifetime model
MOS devices
Reliability
Substrate current

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10.1016/j.sse.2004.11.020

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@article{5d58a7ae64714170b26d024a6857ce6d,

title = "Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices",

abstract = "Experimental results are presented to indicate that the widely used power-law models for lifetime estimation are questionable for deep-submicron (",

keywords = "Gate current, Lifetime model, MOS devices, Reliability, Substrate current",

author = "Zhi Cui and Liou, {Juin J.} and Yun Yue and Hei Wong",

year = "2005",

month = mar,

doi = "10.1016/j.sse.2004.11.020",

language = "English",

volume = "49",

pages = "505--511",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "3",

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TY - JOUR

T1 - Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices

AU - Cui, Zhi

AU - Liou, Juin J.

AU - Yue, Yun

AU - Wong, Hei

PY - 2005/3

Y1 - 2005/3

N2 - Experimental results are presented to indicate that the widely used power-law models for lifetime estimation are questionable for deep-submicron (

AB - Experimental results are presented to indicate that the widely used power-law models for lifetime estimation are questionable for deep-submicron (

KW - Gate current

KW - Lifetime model

KW - MOS devices

KW - Reliability

KW - Substrate current

UR - http://www.scopus.com/inward/record.url?scp=12344316337&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-12344316337&origin=recordpage

U2 - 10.1016/j.sse.2004.11.020

DO - 10.1016/j.sse.2004.11.020

M3 - RGC 21 - Publication in refereed journal

SN - 0038-1101

VL - 49

SP - 505

EP - 511

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices

Abstract

Research Keywords

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