Substitutionality of Te- and Sn-related DX centers in AlxGa1-xAs

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Kin Man Yu
  • Ken Khachaturyan
  • Eicke R. Weber
  • Henry P. Lee
  • Etienne G. Kolas

Detail(s)

Original languageEnglish
Pages (from-to)2462-2465
Journal / PublicationPhysical Review B
Volume43
Issue number3
Publication statusPublished - 1991
Externally publishedYes

Abstract

The lattice locations of Te and Sn atoms forming DX centers in AlxGa1-xAs were determined by particle-induced x-ray emission and ion-beam-channeling methods. The Te atoms were found to be in the As substitutional sites while the Sn atoms were in the Ga(Al) sites. No off-center displacement of Te and Sn larger than 0.14 from the substitutional sites was observed in either system. © 1991 The American Physical Society.

Citation Format(s)

Substitutionality of Te- and Sn-related DX centers in AlxGa1-xAs. / Yu, Kin Man; Khachaturyan, Ken; Weber, Eicke R. et al.
In: Physical Review B, Vol. 43, No. 3, 1991, p. 2462-2465.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review