Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

12 Scopus Citations
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Author(s)

  • H. Jussila
  • J. Kujala
  • F. Tuomisto
  • S. Nagarajan
  • J. Lemettinen
  • T. Huhtio
  • T. O. Tuomi
  • H. Lipsanen
  • M. Sopanen

Detail(s)

Original languageEnglish
Article number75106
Journal / PublicationJournal of Physics D: Applied Physics
Volume47
Issue number7
Publication statusPublished - 19 Feb 2014
Externally publishedYes

Abstract

Nitrogen substitution and formation of point defects in GaP (1-x)Nx layers (x ranging from 0.01 to 0.04) grown on GaP substrates are characterized by channelling Rutherford backscattering, nuclear reaction analysis and positron annihilation spectroscopy measurements. It is observed that the substitutionality of nitrogen into GaP decreases from a value of 0.91 to that of

Research Area(s)

  • GaPN, nuclear reaction analysis, positron annihilation spectroscopy, Rutherford backscattering

Citation Format(s)

Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys. / Jussila, H.; Yu, K. M.; Kujala, J. et al.
In: Journal of Physics D: Applied Physics, Vol. 47, No. 7, 75106, 19.02.2014.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review