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Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys

  • H. Jussila
  • , K. M. Yu
  • , J. Kujala
  • , F. Tuomisto
  • , S. Nagarajan
  • , J. Lemettinen
  • , T. Huhtio
  • , T. O. Tuomi
  • , H. Lipsanen
  • , M. Sopanen

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

Nitrogen substitution and formation of point defects in GaP (1-x)Nx layers (x ranging from 0.01 to 0.04) grown on GaP substrates are characterized by channelling Rutherford backscattering, nuclear reaction analysis and positron annihilation spectroscopy measurements. It is observed that the substitutionality of nitrogen into GaP decreases from a value of 0.91 to that of
Original languageEnglish
Article number75106
JournalJournal of Physics D: Applied Physics
Volume47
Issue number7
DOIs
Publication statusPublished - 19 Feb 2014
Externally publishedYes

Research Keywords

  • GaPN
  • nuclear reaction analysis
  • positron annihilation spectroscopy
  • Rutherford backscattering

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