Abstract
Nitrogen substitution and formation of point defects in GaP (1-x)Nx layers (x ranging from 0.01 to 0.04) grown on GaP substrates are characterized by channelling Rutherford backscattering, nuclear reaction analysis and positron annihilation spectroscopy measurements. It is observed that the substitutionality of nitrogen into GaP decreases from a value of 0.91 to that of
| Original language | English |
|---|---|
| Article number | 75106 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 47 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 19 Feb 2014 |
| Externally published | Yes |
Research Keywords
- GaPN
- nuclear reaction analysis
- positron annihilation spectroscopy
- Rutherford backscattering
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