Substitutionality of Ge atoms in ion implanted AlSb

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Author(s)

  • Kin Man Yu
  • A. J. Moll
  • Ning Chan
  • W. Walukiewicz
  • P. Becla

Detail(s)

Original languageEnglish
Journal / PublicationApplied Physics Letters
Publication statusPublished - 1995
Externally publishedYes

Abstract

The substitution of Ge atoms into ion implanted AlSb is investigated by extended x-ray absorption fine structure spectroscopy. Our results reveal that in the as-implanted material, the implanted Ge atoms are equally distributed between two specific sites, one surrounded by Al atoms and the other surrounded by Sb atoms. After annealing at 750°C for 5 s, the coordination number of the Ge atoms increases from ∼3 to ∼4 indicating solid phase regrowth of the implantation induced amorphous surface layer. Moreover, in the annealed AlSb, the substitution of Ge atoms into the Al sublattice dominates with an estimated [GeAl]:[GeSb]∼0.8:0.2. These results suggest that Ge atoms act preferentially as donor species in AlSb.© 1995 American Institute of Physics.

Citation Format(s)

Substitutionality of Ge atoms in ion implanted AlSb. / Yu, Kin Man; Moll, A. J.; Chan, Ning; Walukiewicz, W.; Becla, P.

In: Applied Physics Letters, 1995.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review