SUBMICROMETER STRUCTURES FABRICATED BY MASKED ION BEAM LITHOGRAPHY AND DRY ETCHING.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1526-1529 |
| Journal / Publication | Journal of the Electrochemical Society |
| Volume | 135 |
| Issue number | 6 |
| Publication status | Published - Jun 1988 |
| Externally published | Yes |
Link(s)
Abstract
Dry etching has been used in conjunction with masked ion beam lithography to fabricate devices with controllable submicrometer dimensions. A new self-aligned technique used to fabricate GaAs MESFET's with 0. 15-0. 27 mu m gate lengths and a new thinning technique used to produce GaAs columns with widths less than 10 nm are reviewed. Results on dry etching through stencil masks to obtain linewidths as small as 60 nm are presented.
Citation Format(s)
SUBMICROMETER STRUCTURES FABRICATED BY MASKED ION BEAM LITHOGRAPHY AND DRY ETCHING. / Pang, S. W.; Goodhue, W. D.; Geis, M. W.
In: Journal of the Electrochemical Society, Vol. 135, No. 6, 06.1988, p. 1526-1529.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
