SUBMICROMETER STRUCTURES FABRICATED BY MASKED ION BEAM LITHOGRAPHY AND DRY ETCHING.

Dry etching has been used in conjunction with masked ion beam lithography to fabricate devices with controllable submicrometer dimensions. A new self-aligned technique used to fabricate GaAs MESFET's with 0. 15-0. 27 mu m gate lengths and a new thinning technique used to produce GaAs columns with widths less than 10 nm are reviewed. Results on dry etching through stencil masks to obtain linewidths as small as 60 nm are presented.