Sub-1-mm2 GaN Doherty Power Amplifier With Compact Source and Load Networks for a Small Form-Factor Package

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Original languageEnglish
Pages (from-to)61-64
Journal / PublicationIEEE Solid-State Circuits Letters
Online published7 Mar 2023
Publication statusPublished - 2023


In this letter, a gallium nitride (GaN) Doherty power amplifier (DPA) occupying a sub-1-mm2 die area is presented. This small die with the compact source network (CSN) and compact load network (CLN) can be fully packaged in a small form factor. Previous solutions have integrated all components into the die with complicated matching and bias networks, resulting in a large and expensive die area. Innovative component merging and compact bond-wire matching in the CSN and CLN have substantially reduced the die size for future massive multiple-input-multiple-output (MIMO) small cells. This proposed DPA was designed and fabricated using a commercial 150-nm GaN/silicon carbide (SiC) high electron mobility transistor (HEMT) process to validate architecture and design methodologies. Experimental results demonstrate that this sub-1-mm2 DPA can deliver saturated powers (Psat) of 38-39 dBm from 4.2 to 4.6 GHz. Measured drain efficiencies (DEs) of the proposed DPA are more than 45%, from the 6-dB back off power to Psat, over the entire frequency band. © 2023 IEEE.

Research Area(s)

  • Inductors, Semiconductor device measurement, Impedance matching, Inductance, Shunts (electrical), HEMTs, Gain, pi-type lumped network, bondwires, Doherty power amplifier (DPA), gallium-nitride high-electron-mobility transistor (GaN-HEMT), integrated circuits, MMIC