Sub-100 mn p+/n junction formation using plasma immersion ion implantation

X. Y. Qian; N. W. Cheung; M. A. Lieberman; M. I. Current; P. K. Chu; W. L. Harrington; C. W. Magee; E. M. Botnick

doi:10.1016/0168-583X(91)96286-T

Sub-100 mn p+/n junction formation using plasma immersion ion implantation

X. Y. Qian, N. W. Cheung, M. A. Lieberman, M. I. Current, P. K. Chu, W. L. Harrington, C. W. Magee, E. M. Botnick

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

45 Citations (Scopus)

Abstract

Using plasma immersion ion implantation (PIII), sub-100 nm p⁺/n junctions were fabricated with SiF₄ preamorphization followed by BF₃ doping. With this technique, the dose rate can be as high as 10¹⁶/cm² per second. The silicon wafer was immersed in SiF₄ or BF₃ plasma and biased with a negative voltage. The positively charged ions were accelerated by the electric field in the plasma sheath and implanted into the wafer. The junction depth can be controlled by varying the negative voltage applied to the wafer holder and thermal annealing conditions. © 1991.

Original language	English
Pages (from-to)	821-825
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	55
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(91)96286-T
Publication status	Published - 2 Apr 1991
Externally published	Yes

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title = "Sub-100 mn p+/n junction formation using plasma immersion ion implantation",

abstract = "Using plasma immersion ion implantation (PIII), sub-100 nm p+/n junctions were fabricated with SiF4 preamorphization followed by BF3 doping. With this technique, the dose rate can be as high as 1016/cm2 per second. The silicon wafer was immersed in SiF4 or BF3 plasma and biased with a negative voltage. The positively charged ions were accelerated by the electric field in the plasma sheath and implanted into the wafer. The junction depth can be controlled by varying the negative voltage applied to the wafer holder and thermal annealing conditions. {\textcopyright} 1991.",

author = "Qian, {X. Y.} and Cheung, {N. W.} and Lieberman, {M. A.} and Current, {M. I.} and Chu, {P. K.} and Harrington, {W. L.} and Magee, {C. W.} and Botnick, {E. M.}",

year = "1991",

month = apr,

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doi = "10.1016/0168-583X(91)96286-T",

language = "English",

volume = "55",

pages = "821--825",

journal = "Nuclear Inst. and Methods in Physics Research, B",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Sub-100 mn p+/n junction formation using plasma immersion ion implantation

AU - Qian, X. Y.

AU - Cheung, N. W.

AU - Lieberman, M. A.

AU - Current, M. I.

AU - Chu, P. K.

AU - Harrington, W. L.

AU - Magee, C. W.

AU - Botnick, E. M.

PY - 1991/4/2

Y1 - 1991/4/2

N2 - Using plasma immersion ion implantation (PIII), sub-100 nm p+/n junctions were fabricated with SiF4 preamorphization followed by BF3 doping. With this technique, the dose rate can be as high as 1016/cm2 per second. The silicon wafer was immersed in SiF4 or BF3 plasma and biased with a negative voltage. The positively charged ions were accelerated by the electric field in the plasma sheath and implanted into the wafer. The junction depth can be controlled by varying the negative voltage applied to the wafer holder and thermal annealing conditions. © 1991.

AB - Using plasma immersion ion implantation (PIII), sub-100 nm p+/n junctions were fabricated with SiF4 preamorphization followed by BF3 doping. With this technique, the dose rate can be as high as 1016/cm2 per second. The silicon wafer was immersed in SiF4 or BF3 plasma and biased with a negative voltage. The positively charged ions were accelerated by the electric field in the plasma sheath and implanted into the wafer. The junction depth can be controlled by varying the negative voltage applied to the wafer holder and thermal annealing conditions. © 1991.

UR - http://www.scopus.com/inward/record.url?scp=0000110188&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0000110188&origin=recordpage

U2 - 10.1016/0168-583X(91)96286-T

DO - 10.1016/0168-583X(91)96286-T

M3 - RGC 21 - Publication in refereed journal

SN - 0168-583X

VL - 55

SP - 821

EP - 825

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-4

ER -

Sub-100 mn p+/n junction formation using plasma immersion ion implantation

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