SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Article number232113
Journal / PublicationApplied Physics Letters
Volume103
Issue number23
Publication statusPublished - 2 Dec 2013
Externally publishedYes

Abstract

N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.