SU-8 doped and encapsulated n-type graphene nanomesh with high air stability
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 232113 |
Journal / Publication | Applied Physics Letters |
Volume | 103 |
Issue number | 23 |
Publication status | Published - 2 Dec 2013 |
Externally published | Yes |
Link(s)
Abstract
N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.
Citation Format(s)
SU-8 doped and encapsulated n-type graphene nanomesh with high air stability. / Al-Mumen, Haider; Dong, Lixin; Li, Wen.
In: Applied Physics Letters, Vol. 103, No. 23, 232113, 02.12.2013.
In: Applied Physics Letters, Vol. 103, No. 23, 232113, 02.12.2013.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review