SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

17 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Article number232113
Journal / PublicationApplied Physics Letters
Volume103
Issue number23
Publication statusPublished - 2 Dec 2013
Externally publishedYes

Abstract

N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.

Citation Format(s)

SU-8 doped and encapsulated n-type graphene nanomesh with high air stability. / Al-Mumen, Haider; Dong, Lixin; Li, Wen.
In: Applied Physics Letters, Vol. 103, No. 23, 232113, 02.12.2013.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review