TY - JOUR
T1 - SU-8 doped and encapsulated n-type graphene nanomesh with high air stability
AU - Al-Mumen, Haider
AU - Dong, Lixin
AU - Li, Wen
PY - 2013/12/2
Y1 - 2013/12/2
N2 - N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.
AB - N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.
UR - http://www.scopus.com/inward/record.url?scp=84889873436&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84889873436&origin=recordpage
U2 - 10.1063/1.4841615
DO - 10.1063/1.4841615
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 103
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 23
M1 - 232113
ER -