Studying the growth of cubic boron nitride on amorphous tetrahedral carbon interlayers

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Kar Man Leung
  • Chit Yiu Chan
  • Yat Ming Chong
  • Yuen Yao
  • Kwok Leung Ma
  • Igor Bello
  • Shuit Tong Lee

Detail(s)

Original languageEnglish
Pages (from-to)16272-16277
Journal / PublicationJournal of Physical Chemistry B
Volume109
Issue number34
Publication statusPublished - 1 Sept 2005

Abstract

The growth of cubic boron nitride (cBN) films on bare silicon and amorphous tetrahedral carbon (ta-C) layers prepared on silicon substrates was studied. The cBN films were prepared by radio frequency magnetron sputter deposition at ∼870 °C. The original ta-C interlayers were graphitized and restructured under high temperature and possibly under ion bombardment during BN deposition. The majority of graphitic basal planes were nearly perpendicular to the surface of silicon substrates. The BN films grown on these restructured carbon layers were deposited with higher content of cubic phase and did not show delamination signs. Turbostratic BN (tBN) basal planes extended carbon basal planes and their edges served as cBN nucleation sites. The cBN films grown on textured ta-C interlay ers were insensitive to the ambient environment. The residual sp 3-bonded carbon phase confined in the interlayers probably acts as a diffusion barrier preventing the oxidation of dangling bonds near BN interface and thus precludes weakening the interface as a result of volume expansion. The carbon interlayers also improve the crystallinity of the oriented tBN because they are continuation of carbon graphitic basal planes so that the volume fraction of nitrogen-void (N-void) defects in the sp2-bonded BN intermediate layers is reduced. The strong sp3-bonded carbon matrix could thereto withstand large compressive stress and facilitates deposition of thicker cBN films. © 2005 American Chemical Society.

Citation Format(s)

Studying the growth of cubic boron nitride on amorphous tetrahedral carbon interlayers. / Leung, Kar Man; Chan, Chit Yiu; Chong, Yat Ming et al.
In: Journal of Physical Chemistry B, Vol. 109, No. 34, 01.09.2005, p. 16272-16277.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review