Study on the positron annihilation lifetime in Cd1-xZnxTe crystal

Shi-Hong Tang; Bei-Jun Zhao; Shi-Fu Zhu; Rui-Lin Wang; De-You Gao; Jun Chen; Dong-Min Zhang; Zhi-Yu He; Jun Fang; Guo Hong

Study on the positron annihilation lifetime in Cd_1-xZn_xTe crystal

Shi-Hong Tang
, Bei-Jun Zhao
, Shi-Fu Zhu
, Rui-Lin Wang
, De-You Gao
, Jun Chen
, Dong-Min Zhang
, Zhi-Yu He
, Jun Fang
, Guo Hong

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

Cd_1-xZn_xTe crystals were prepared by the improved Bridgman method from cadmium-rich materials. The defects in the as-grown and annealed samples are investigated by positron annihilation technology in this paper. It was found that the lifetime of the defects in the as-grown samples had a long time and the point defects were mainly cadmium vacancies which were preponderant in Cd_1-xZn_xTe crystal. It was found that the positron annihilation lifetime heavily depended upon the annealing temperature after annealing in the same ingredient atmosphere of cadmium-rich Cd_1-xZn_xTe at the different temperatures, and the optimal annealing temperature was around 700°C by testing and analyzing the movement, congregation and disappearance of the vacancies during annealing process.

Original language	English
Pages (from-to)	306-309
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	35
Issue number	2
Publication status	Published - Apr 2006
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

Cd1-xZnxTe(CZT)
Lifetime, annealing
Positron annihilation technology (PAT)

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Cite this

@article{6d3c2acb000748a3b42cf099e4318eda,

title = "Study on the positron annihilation lifetime in Cd1-xZnxTe crystal",

abstract = "Cd1-xZnxTe crystals were prepared by the improved Bridgman method from cadmium-rich materials. The defects in the as-grown and annealed samples are investigated by positron annihilation technology in this paper. It was found that the lifetime of the defects in the as-grown samples had a long time and the point defects were mainly cadmium vacancies which were preponderant in Cd1-xZnxTe crystal. It was found that the positron annihilation lifetime heavily depended upon the annealing temperature after annealing in the same ingredient atmosphere of cadmium-rich Cd1-xZnxTe at the different temperatures, and the optimal annealing temperature was around 700°C by testing and analyzing the movement, congregation and disappearance of the vacancies during annealing process.",

keywords = "Cd1-xZnxTe(CZT), Lifetime, annealing, Positron annihilation technology (PAT)",

author = "Shi-Hong Tang and Bei-Jun Zhao and Shi-Fu Zhu and Rui-Lin Wang and De-You Gao and Jun Chen and Dong-Min Zhang and Zhi-Yu He and Jun Fang and Guo Hong",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2006",

month = apr,

language = "English",

volume = "35",

pages = "306--309",

number = "2",

}

TY - JOUR

T1 - Study on the positron annihilation lifetime in Cd1-xZnxTe crystal

AU - Tang, Shi-Hong

AU - Zhao, Bei-Jun

AU - Zhu, Shi-Fu

AU - Wang, Rui-Lin

AU - Gao, De-You

AU - Chen, Jun

AU - Zhang, Dong-Min

AU - He, Zhi-Yu

AU - Fang, Jun

AU - Hong, Guo

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2006/4

Y1 - 2006/4

N2 - Cd1-xZnxTe crystals were prepared by the improved Bridgman method from cadmium-rich materials. The defects in the as-grown and annealed samples are investigated by positron annihilation technology in this paper. It was found that the lifetime of the defects in the as-grown samples had a long time and the point defects were mainly cadmium vacancies which were preponderant in Cd1-xZnxTe crystal. It was found that the positron annihilation lifetime heavily depended upon the annealing temperature after annealing in the same ingredient atmosphere of cadmium-rich Cd1-xZnxTe at the different temperatures, and the optimal annealing temperature was around 700°C by testing and analyzing the movement, congregation and disappearance of the vacancies during annealing process.

AB - Cd1-xZnxTe crystals were prepared by the improved Bridgman method from cadmium-rich materials. The defects in the as-grown and annealed samples are investigated by positron annihilation technology in this paper. It was found that the lifetime of the defects in the as-grown samples had a long time and the point defects were mainly cadmium vacancies which were preponderant in Cd1-xZnxTe crystal. It was found that the positron annihilation lifetime heavily depended upon the annealing temperature after annealing in the same ingredient atmosphere of cadmium-rich Cd1-xZnxTe at the different temperatures, and the optimal annealing temperature was around 700°C by testing and analyzing the movement, congregation and disappearance of the vacancies during annealing process.

KW - Cd1-xZnxTe(CZT)

KW - Lifetime, annealing

KW - Positron annihilation technology (PAT)

UR - https://www.scopus.com/pages/publications/33646877263

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33646877263&origin=recordpage

M3 - RGC 21 - Publication in refereed journal

SN - 1000-985X

VL - 35

SP - 306

EP - 309

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 2

ER -