Study of twins in GaAs, GaP and InAs crystals

T. P. Chen; F. R. Chen; Y. C. Chuang; Y. D. Guo; J. G. Peng; T. S. Huang; L. J. Chen

doi:10.1016/0022-0248(92)90055-N

Study of twins in GaAs, GaP and InAs crystals

T. P. Chen
, F. R. Chen
, Y. C. Chuang
, Y. D. Guo
, J. G. Peng
, T. S. Huang
, L. J. Chen

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

24 Citations (Scopus)

Abstract

Twins in three different III-V compound semiconductors, including GaAs, GaP, and InAs, crystals have been studied by both chemical etching method and transmission electron microscopy. From chemical etching it is concluded that the growth conditions which result in the generation of large irregular facets also favor the formation of twins. However, the facets are not necessarily the nucleation sites of twins. All twins in III-V compound semiconductors are identified by chemical etching method to be 60° rotation twins.

Original language	English
Pages (from-to)	109-116
Journal	Journal of Crystal Growth
Volume	118
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-0248(92)90055-N
Publication status	Published - Mar 1992
Externally published	Yes

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title = "Study of twins in GaAs, GaP and InAs crystals",

abstract = "Twins in three different III-V compound semiconductors, including GaAs, GaP, and InAs, crystals have been studied by both chemical etching method and transmission electron microscopy. From chemical etching it is concluded that the growth conditions which result in the generation of large irregular facets also favor the formation of twins. However, the facets are not necessarily the nucleation sites of twins. All twins in III-V compound semiconductors are identified by chemical etching method to be 60° rotation twins. ",

author = "Chen, \{T. P.\} and Chen, \{F. R.\} and Chuang, \{Y. C.\} and Guo, \{Y. D.\} and Peng, \{J. G.\} and Huang, \{T. S.\} and Chen, \{L. J.\}",

year = "1992",

month = mar,

doi = "10.1016/0022-0248(92)90055-N",

language = "English",

volume = "118",

pages = "109--116",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Study of twins in GaAs, GaP and InAs crystals

AU - Chen, T. P.

AU - Chen, F. R.

AU - Chuang, Y. C.

AU - Guo, Y. D.

AU - Peng, J. G.

AU - Huang, T. S.

AU - Chen, L. J.

PY - 1992/3

Y1 - 1992/3

N2 - Twins in three different III-V compound semiconductors, including GaAs, GaP, and InAs, crystals have been studied by both chemical etching method and transmission electron microscopy. From chemical etching it is concluded that the growth conditions which result in the generation of large irregular facets also favor the formation of twins. However, the facets are not necessarily the nucleation sites of twins. All twins in III-V compound semiconductors are identified by chemical etching method to be 60° rotation twins.

AB - Twins in three different III-V compound semiconductors, including GaAs, GaP, and InAs, crystals have been studied by both chemical etching method and transmission electron microscopy. From chemical etching it is concluded that the growth conditions which result in the generation of large irregular facets also favor the formation of twins. However, the facets are not necessarily the nucleation sites of twins. All twins in III-V compound semiconductors are identified by chemical etching method to be 60° rotation twins.

UR - https://www.scopus.com/pages/publications/0026837394

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0026837394&origin=recordpage

U2 - 10.1016/0022-0248(92)90055-N

DO - 10.1016/0022-0248(92)90055-N

M3 - RGC 21 - Publication in refereed journal

SN - 0022-0248

VL - 118

SP - 109

EP - 116

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Study of twins in GaAs, GaP and InAs crystals

Abstract

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