Study of the mechanism of super resolution optical near-field structure

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)315-317
Journal / PublicationProceedings of SPIE - The International Society for Optical Engineering
Volume3864
Publication statusPublished - 1999
Externally publishedYes

Conference

TitleProceedings of the 1999 Joint International Symposium on Optical Memory and Optical Optical Data Storage (ISOM/ODS'99)
CityKoloa, HI, USA
Period12 - 15 July 1999

Abstract

Super resolution optical near-field structure (super-RENS) is a useful new technique for the effective ultrahigh density near-field recording without diffraction limit. The SiN/Sb/SiN thin films provide a platform for the enhanced surface plasmon effects. The non-linearity of the photothermal transfer from the interface of Sb/SiN to the GeSbTe recording layer determines the effective threshold of the transition power. Recording marks less than 100 nm can be attained by adjusting the input laser power or the spacing layer of SiN.

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