Study of the Electronic Trap Distribution at the SiO2-Si Interface Utilizing the Low-Frequency Noise Measurement

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)1743-1749
Journal / PublicationIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - Jul 1990
Externally publishedYes


A correlation of the trap distribution at the silicon/oxide interface with the low-frequency noise measurement in MOS devices at temperatures ranging from 77 to 300 K is presented. Several devices with differently prepared gate oxides were used to study the process-induced trap distribution. Several peaks varying from sample to sample are found in a frequency index of noise spectrum versus temperature plot and are correlated with the discrete trap distribution across the bandgap of silicon. This method provides more information on traps as it circumvents the complexity of superimposing different traps which was encountered in capacitance-voltage (C-V) method. Results, either compatible with others' work or consistent with data based on other measurements, show that the electronic trapping behavior in MOS structures is governed by two intrinsic traps located at 0.12 and 0.3 eV (both measured from the conduction band) for all kinds of oxides. In addition, dry oxidation was found to introduce an additional trap at an energy level of 0.23 eV, and annealing the gate oxide in ammonia at high temperature (> 1000°C) results in an enhancement of the trap density at 0.43 eV below the conduction band edge of silicon, which was also observed in a quasi-static C-V measurement. © 1990 IEEE