Study of porous silicon gas sensor

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Author(s)

  • W. M. Kwok
  • Y. C. Bow
  • W. Y. Chan
  • M. C. Poon
  • P. G. Han

Detail(s)

Original languageEnglish
Title of host publicationProceedings of the IEEE Hong Kong Electron Devices Meeting
Pages80-83
Publication statusPublished - 1999
Externally publishedYes

Conference

Title1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CityShatin, Hong Kong
Period26 June 1999

Abstract

Porous silicon (Si) and porous poly-Si organic and humidity vapor sensors have been studied. For aluminum (Al)/porous Si/p-Si/Al Schottky diode sensor, the sensitivity compared to air at room temperature in 2600 ppm acetone, methanol, 2-propanol and ethanol vapor are about 400, 500, 1000 and 4000% respectively. Sensitivity for 800-2600 ppm ethanol is 200 to 4000%. The sensor can be converted into an Al/porous Si/Al resistor sensor with sensitivity of about 500 times for a humidity change of 43-75%. Both sensors have response time of about 0.5 min and sensitivity is repeatable and stable with time. The porous Si sensor can be integrated into other VLSI Si devices to form novel microelectronic systems.

Citation Format(s)

Study of porous silicon gas sensor. / Kwok, W. M.; Bow, Y. C.; Chan, W. Y.; Poon, M. C.; Han, P. G.; Wong, H.

Proceedings of the IEEE Hong Kong Electron Devices Meeting. 1999. p. 80-83.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review