Study of planarization of cobalt silicide lines and silicon surfaces by scanning force microscopy and scanning electron microscopy

K. H. Robrock; K. N. Tu; D. W. Abraham; J. B. Clabes

doi:10.1063/1.101386

Study of planarization of cobalt silicide lines and silicon surfaces by scanning force microscopy and scanning electron microscopy

K. H. Robrock
, K. N. Tu
, D. W. Abraham
, J. B. Clabes

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

5 Citations (Scopus)

Abstract

Fine lines of 1.5-μm-wide and 80-nm-thick Co were patterned by a lithographic technique and deposited by electron gun onto (100) Si surfaces. Reacting the Co and Si to form CoSi₂ lines was carried out at 600°C in He atmosphere. The composite surface consisting of alternating silicides and Si as seen by scanning electron microscopy showed qualitatively that the silicide lines have sunk completely into the Si and the entire surface appears planar. Quantitative changes in vertical direction before and after the formation of the silicide lines have been measured by atomic force microscopy.

Original language	English
Pages (from-to)	1543-1545
Journal	Applied Physics Letters
Volume	54
Issue number	16
DOIs	https://doi.org/10.1063/1.101386
Publication status	Published - 1989
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Study of planarization of cobalt silicide lines and silicon surfaces by scanning force microscopy and scanning electron microscopy",

abstract = "Fine lines of 1.5-μm-wide and 80-nm-thick Co were patterned by a lithographic technique and deposited by electron gun onto (100) Si surfaces. Reacting the Co and Si to form CoSi2 lines was carried out at 600°C in He atmosphere. The composite surface consisting of alternating silicides and Si as seen by scanning electron microscopy showed qualitatively that the silicide lines have sunk completely into the Si and the entire surface appears planar. Quantitative changes in vertical direction before and after the formation of the silicide lines have been measured by atomic force microscopy.",

author = "Robrock, \{K. H.\} and Tu, \{K. N.\} and Abraham, \{D. W.\} and Clabes, \{J. B.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1989",

doi = "10.1063/1.101386",

language = "English",

volume = "54",

pages = "1543--1545",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Study of planarization of cobalt silicide lines and silicon surfaces by scanning force microscopy and scanning electron microscopy

AU - Robrock, K. H.

AU - Tu, K. N.

AU - Abraham, D. W.

AU - Clabes, J. B.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1989

Y1 - 1989

N2 - Fine lines of 1.5-μm-wide and 80-nm-thick Co were patterned by a lithographic technique and deposited by electron gun onto (100) Si surfaces. Reacting the Co and Si to form CoSi2 lines was carried out at 600°C in He atmosphere. The composite surface consisting of alternating silicides and Si as seen by scanning electron microscopy showed qualitatively that the silicide lines have sunk completely into the Si and the entire surface appears planar. Quantitative changes in vertical direction before and after the formation of the silicide lines have been measured by atomic force microscopy.

AB - Fine lines of 1.5-μm-wide and 80-nm-thick Co were patterned by a lithographic technique and deposited by electron gun onto (100) Si surfaces. Reacting the Co and Si to form CoSi2 lines was carried out at 600°C in He atmosphere. The composite surface consisting of alternating silicides and Si as seen by scanning electron microscopy showed qualitatively that the silicide lines have sunk completely into the Si and the entire surface appears planar. Quantitative changes in vertical direction before and after the formation of the silicide lines have been measured by atomic force microscopy.

UR - https://www.scopus.com/pages/publications/0042324984

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0042324984&origin=recordpage

U2 - 10.1063/1.101386

DO - 10.1063/1.101386

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 54

SP - 1543

EP - 1545

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Study of planarization of cobalt silicide lines and silicon surfaces by scanning force microscopy and scanning electron microscopy

Abstract

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