Study of Parasitic and Stray Components Induced Ringings in Class E Power Amplifiers in Mhz Range

Hao Zhang, Siu Chung Wong, Chi K. Tse, Xikui Ma

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

5 Citations (Scopus)

Abstract

For Class E power amplifier circuits operating at switching frequencies of the MHz range or higher, the parasitic capacitance of the MOS transistor switch becomes a significant part of the circuit adding to the usual intended circuit components. For the Class E power amplifier, this is often regarded as an advantage because the parasitic capacitor can be utilized for achieving zero voltage and current switchings, thus reducing the size of an external capacitor which has to be inserted. However, parallel connection of parasitic, stray and external capacitors may give rise to high-frequency ringings of the voltage across the switch, causing the circuit to deviate from the desired Class E operation. In this paper, the phenomenon and its underlying cause is studied by simulations and experiments. A circuit model of the amplifier with parasitic or stray components is developed to explain the phenomenon.
Original languageEnglish
Title of host publicationProceedings of the 2005 European Conference on Circuit Theory and Design
Pages129-132
Volume3
DOIs
Publication statusPublished - Sept 2005
Externally publishedYes
Event2005 European Conference on Circuit Theory and Design - Cork, Ireland
Duration: 28 Aug 20052 Sept 2005

Publication series

NameProceedings of the 2005 European Conference on Circuit Theory and Design
Volume3

Conference

Conference2005 European Conference on Circuit Theory and Design
Country/TerritoryIreland
CityCork
Period28/08/052/09/05

Fingerprint

Dive into the research topics of 'Study of Parasitic and Stray Components Induced Ringings in Class E Power Amplifiers in Mhz Range'. Together they form a unique fingerprint.

Cite this