Study of Excess Silicon at Si3N4/Thermal SiO2 Interface Using EELS and Ellipsometric Measurements

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • V. A. Gritsenko
  • S. N. Svitasheva
  • I. P. Petrenko
  • J. B. Xu
  • I. H. Wilson

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)780-785
Journal / PublicationJournal of the Electrochemical Society
Volume146
Issue number2
Publication statusPublished - 1999

Abstract

The chemical composition and structure of the Si3N4/thermal SiO2 interface in silicon/oxide/nitride/oxide (SONO) structures were studied by using electron energy loss spectroscopy (EELS) and ellipsometric measurements. Both experiments show the existence of excess silicon at the Si3N4/thermal SiO2 interface, in the form of Si-Si bonds in the Si-rich silicon oxynitride. Wet oxidation of the as-deposited Si3N4 has profound effects on the interfaces in SONO structure. Mechanisms responsible for these observations are proposed based on the chemical reactions during the synthesis of the SONO structure. Particularly, we propose that the Si-Si bonds are produced by replacing nitrogen with oxygen during the oxidation of Si3N4. These bonds should be the responsible candidates for the positive charge accumulation in re-oxidized nitrided oxide at the hot hole injection and ionizing radiation. © 1999 The Electrochemical Society. All rights reserved.

Citation Format(s)

Study of Excess Silicon at Si3N4/Thermal SiO2 Interface Using EELS and Ellipsometric Measurements. / Gritsenko, V. A.; Svitasheva, S. N.; Petrenko, I. P.; Wong, Hei; Xu, J. B.; Wilson, I. H.

In: Journal of the Electrochemical Society, Vol. 146, No. 2, 1999, p. 780-785.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review