Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy

Yingran He; Hock Guan Ong; Yang Zhao; Sailing He; Lain-Jong Li; Junling Wang

doi:10.1021/jp905779f

Study of charge diffusion at the carbon nanotube-SiO₂ interface by electrostatic force microscopy

Yingran He
, Hock Guan Ong
, Yang Zhao
, Sailing He
, Lain-Jong Li
, Junling Wang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

Abstract

Hysteresis behavior is observed in the transfer characteristic of most carbon-nanotube-based field effect transistors, and charges trapped at the carbon nanotube-dielectric interface are believed to be the cause. We have studied charge injection and dissipation around the interface of carbon nanotubes and SiO₂ at different temperatures using an electrostatic force microscope. Numerical simulations were performed to extract the charge diffusion coefficients on the SiO₂ surface under ambient conditions at different temperatures, and a critical temperature of ∼150 °C is observed. The activation energy of charge diffusion changes from ∼0.43 to ∼0.98 eV above this temperature, which is attributed to the change of surface chemistry. A more accurate model taking into consideration the electrostatic interaction among charges is used subsequently, and the fitting results are significantly improved. It is noted that the two models lead to similar activation energies. © 2009 American Chemical Society.

Original language	English
Pages (from-to)	15476-15479
Journal	The Journal of Physical Chemistry C
Volume	113
Issue number	35
DOIs	https://doi.org/10.1021/jp905779f
Publication status	Published - 3 Sept 2009
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Access Output

10.1021/jp905779f

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{a5d17c717dcb4f128bde7544a336fbc0,

title = "Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy",

abstract = "Hysteresis behavior is observed in the transfer characteristic of most carbon-nanotube-based field effect transistors, and charges trapped at the carbon nanotube-dielectric interface are believed to be the cause. We have studied charge injection and dissipation around the interface of carbon nanotubes and SiO2 at different temperatures using an electrostatic force microscope. Numerical simulations were performed to extract the charge diffusion coefficients on the SiO2 surface under ambient conditions at different temperatures, and a critical temperature of ∼150 °C is observed. The activation energy of charge diffusion changes from ∼0.43 to ∼0.98 eV above this temperature, which is attributed to the change of surface chemistry. A more accurate model taking into consideration the electrostatic interaction among charges is used subsequently, and the fitting results are significantly improved. It is noted that the two models lead to similar activation energies. {\textcopyright} 2009 American Chemical Society.",

author = "Yingran He and Ong, \{Hock Guan\} and Yang Zhao and Sailing He and Lain-Jong Li and Junling Wang",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2009",

month = sep,

day = "3",

doi = "10.1021/jp905779f",

language = "English",

volume = "113",

pages = "15476--15479",

journal = "The Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "35",

}

TY - JOUR

T1 - Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy

AU - He, Yingran

AU - Ong, Hock Guan

AU - Zhao, Yang

AU - He, Sailing

AU - Li, Lain-Jong

AU - Wang, Junling

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2009/9/3

Y1 - 2009/9/3

N2 - Hysteresis behavior is observed in the transfer characteristic of most carbon-nanotube-based field effect transistors, and charges trapped at the carbon nanotube-dielectric interface are believed to be the cause. We have studied charge injection and dissipation around the interface of carbon nanotubes and SiO2 at different temperatures using an electrostatic force microscope. Numerical simulations were performed to extract the charge diffusion coefficients on the SiO2 surface under ambient conditions at different temperatures, and a critical temperature of ∼150 °C is observed. The activation energy of charge diffusion changes from ∼0.43 to ∼0.98 eV above this temperature, which is attributed to the change of surface chemistry. A more accurate model taking into consideration the electrostatic interaction among charges is used subsequently, and the fitting results are significantly improved. It is noted that the two models lead to similar activation energies. © 2009 American Chemical Society.

AB - Hysteresis behavior is observed in the transfer characteristic of most carbon-nanotube-based field effect transistors, and charges trapped at the carbon nanotube-dielectric interface are believed to be the cause. We have studied charge injection and dissipation around the interface of carbon nanotubes and SiO2 at different temperatures using an electrostatic force microscope. Numerical simulations were performed to extract the charge diffusion coefficients on the SiO2 surface under ambient conditions at different temperatures, and a critical temperature of ∼150 °C is observed. The activation energy of charge diffusion changes from ∼0.43 to ∼0.98 eV above this temperature, which is attributed to the change of surface chemistry. A more accurate model taking into consideration the electrostatic interaction among charges is used subsequently, and the fitting results are significantly improved. It is noted that the two models lead to similar activation energies. © 2009 American Chemical Society.

UR - https://www.scopus.com/pages/publications/70349151719

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-70349151719&origin=recordpage

U2 - 10.1021/jp905779f

DO - 10.1021/jp905779f

M3 - RGC 21 - Publication in refereed journal

SN - 1932-7447

VL - 113

SP - 15476

EP - 15479

JO - The Journal of Physical Chemistry C

JF - The Journal of Physical Chemistry C

IS - 35

ER -