Structure-Property Relationship of Oxygen-Doped Two-Dimensional Gallium Selenide for Hydrogen Evolution Reaction Revealed from Density Functional Theory
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Detail(s)
Original language | English |
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Pages (from-to) | 6070-6079 |
Journal / Publication | ACS Applied Energy Materials |
Volume | 5 |
Issue number | 5 |
Online published | 3 May 2022 |
Publication status | Published - 23 May 2022 |
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Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-85130041105&origin=recordpage |
Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(41a63055-7e93-4949-a4e4-9a843fe3462f).html |
Abstract
Two-dimensional (2D) gallium selenide (GaSe) is known for its inert surface and wide bandgap, limiting its application as a photocatalytic material for the hydrogen evolution reaction (HER). Partial substitution of Se with O atoms can improve its catalytic efficiency. This work discovered that the surface activity of the substitutional O-doped single-layer GaSe surfaces (GaSe1-xOx, for x ≤ 22%) and their bandgap sizes are dependent on the detailed atomic configuration of the dopants, as revealed from density functional theory. For GaSe1-xOx at low O contents, where all O atoms are favorably separated by at least one-Ga-Se-Ga-unit, the surface activity for the HER is insignificantly improved by increasing dopant concentration. By contrast, when more O dopants are available and arranged in adjacent positions (O-Ga-O), the hydrogen adsorption efficiency of GaSe1-xOx increases and their bandgaps are reduced with increasing dopant concentration. These important features are attributed to weakening of the Ga-O covalent interaction in these more localized dopant arrangements, which in turn strengthens the O-H bonds. This weakened Ga-O covalent bond also descends the conduction band minimum toward the Fermi level, resulting in bandgap reduction and thus favoring visible-light absorption. Optimal atomic configurations (all having localized O-dopant arrangements) have been identified, and they exhibit almost thermoneutral hydrogen adsorption free energy ΔGH and small bandgaps (2.09-2.21 eV), making them promising materials to perform an efficient HER. Fine-tuning the Ga-O interaction by applying tensile strength TS parallel to the 2D surface of up to 1% further reduces their bandgaps to 1.95-2.05 eV. Our theoretical predictions suggest that controlling the atomic configuration of dopants provides opportunities for engineering single-layered GaSe1-xOx materials with surface reactivity and bandgaps that suit photocatalytic water splitting.
Research Area(s)
- GaSe, hydrogen absorption, photocatalysis, surface reactivity, water splitting
Citation Format(s)
Structure-Property Relationship of Oxygen-Doped Two-Dimensional Gallium Selenide for Hydrogen Evolution Reaction Revealed from Density Functional Theory. / Demissie, Ephrem G.; Tang, Wai Kit; Siu, Chi-Kit.
In: ACS Applied Energy Materials, Vol. 5, No. 5, 23.05.2022, p. 6070-6079.
In: ACS Applied Energy Materials, Vol. 5, No. 5, 23.05.2022, p. 6070-6079.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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