Structure-Property Relationship of Oxygen-Doped Two-Dimensional Gallium Selenide for Hydrogen Evolution Reaction Revealed from Density Functional Theory

Ephrem G. Demissie, Wai Kit Tang, Chi-Kit Siu*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

5 Citations (Scopus)
25 Downloads (CityUHK Scholars)

Abstract

Two-dimensional (2D) gallium selenide (GaSe) is known for its inert surface and wide bandgap, limiting its application as a photocatalytic material for the hydrogen evolution reaction (HER). Partial substitution of Se with O atoms can improve its catalytic efficiency. This work discovered that the surface activity of the substitutional O-doped single-layer GaSe surfaces (GaSe1-xOx, for x ≤ 22%) and their bandgap sizes are dependent on the detailed atomic configuration of the dopants, as revealed from density functional theory. For GaSe1-xOx at low O contents, where all O atoms are favorably separated by at least one-Ga-Se-Ga-unit, the surface activity for the HER is insignificantly improved by increasing dopant concentration. By contrast, when more O dopants are available and arranged in adjacent positions (O-Ga-O), the hydrogen adsorption efficiency of GaSe1-xOx increases and their bandgaps are reduced with increasing dopant concentration. These important features are attributed to weakening of the Ga-O covalent interaction in these more localized dopant arrangements, which in turn strengthens the O-H bonds. This weakened Ga-O covalent bond also descends the conduction band minimum toward the Fermi level, resulting in bandgap reduction and thus favoring visible-light absorption. Optimal atomic configurations (all having localized O-dopant arrangements) have been identified, and they exhibit almost thermoneutral hydrogen adsorption free energy ΔGH and small bandgaps (2.09-2.21 eV), making them promising materials to perform an efficient HER. Fine-tuning the Ga-O interaction by applying tensile strength TS parallel to the 2D surface of up to 1% further reduces their bandgaps to 1.95-2.05 eV. Our theoretical predictions suggest that controlling the atomic configuration of dopants provides opportunities for engineering single-layered GaSe1-xOx materials with surface reactivity and bandgaps that suit photocatalytic water splitting.
Original languageEnglish
Pages (from-to)6070-6079
JournalACS Applied Energy Materials
Volume5
Issue number5
Online published3 May 2022
DOIs
Publication statusPublished - 23 May 2022

Funding

This work was financially supported by the Research Grants Council of Hong Kong Special Administrative Region (RGC) (Project number: CityU 11301421). Simulation results reported here were partially performed on the high-performance computer facility “CityU Burgundy” of City University of Hong Kong. E.G.D. acknowledges RGC for the award of the Hong Kong PhD Fellowship.

Research Keywords

  • GaSe
  • hydrogen absorption
  • photocatalysis
  • surface reactivity
  • water splitting

Publisher's Copyright Statement

  • COPYRIGHT TERMS OF DEPOSITED POSTPRINT FILE: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Energy Materials, copyright © 2022 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaem.2c00472.

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