Structure and optical properties of ZnO/ZnMgO multi-quantum wells grown on Si(111) substrates

X. Q. Gu; L. P. Zhu; Z. Z. Ye; H. P. He; F. Liu; W. Jaeger; P. K. Chu; M. X. Qiu; Y. Z. Zhang; J. Y. Huang

doi:10.1016/j.spmi.2008.06.002

Structure and optical properties of ZnO/ZnMgO multi-quantum wells grown on Si(111) substrates

X. Q. Gu, L. P. Zhu, Z. Z. Ye, H. P. He, F. Liu, W. Jaeger, P. K. Chu, M. X. Qiu, Y. Z. Zhang, J. Y. Huang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

Abstract

A series of ZnO/Zn_1-xMg_xO multi-quantum wells (MQWs) were grown on Si(111) substrates by pulsed laser deposition (PLD), with different well widths and depths. Transmission electron microscopy (TEM) analysis revealed that all the samples exhibited a good periodic structure with clear interfaces. Moreover, temperature- dependent behavior of excitonic photoluminescence (PL) was investigated in order to investigate the mechanism of the carrier dynamics. In the temperature range studied, the luminescence was dominated by localized exciton (LE) emission, which was significantly blueshifted with respect to the ZnO single layer, due to the well-known quantum-size effect. The blueshift values increased with elevating Mg compositions in barrier layers or decreasing well thickness, being consistent with the calculated results. The relevant activation energies were deduced, varying in a range of 6.2 to 22 meV. © 2008 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	197-202
Journal	Superlattices and Microstructures
Volume	44
Issue number	2
DOIs	https://doi.org/10.1016/j.spmi.2008.06.002
Publication status	Published - Aug 2008

Research Keywords

A3. Pulsed laser deposition
A3. Quantum well
B1. ZnMgO
B2. Semiconducting II-VI materials

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@article{853fb96f354343e58c621dfd1030fbda,

title = "Structure and optical properties of ZnO/ZnMgO multi-quantum wells grown on Si(111) substrates",

abstract = "A series of ZnO/Zn1-xMgxO multi-quantum wells (MQWs) were grown on Si(111) substrates by pulsed laser deposition (PLD), with different well widths and depths. Transmission electron microscopy (TEM) analysis revealed that all the samples exhibited a good periodic structure with clear interfaces. Moreover, temperature- dependent behavior of excitonic photoluminescence (PL) was investigated in order to investigate the mechanism of the carrier dynamics. In the temperature range studied, the luminescence was dominated by localized exciton (LE) emission, which was significantly blueshifted with respect to the ZnO single layer, due to the well-known quantum-size effect. The blueshift values increased with elevating Mg compositions in barrier layers or decreasing well thickness, being consistent with the calculated results. The relevant activation energies were deduced, varying in a range of 6.2 to 22 meV. {\textcopyright} 2008 Elsevier Ltd. All rights reserved.",

keywords = "A3. Pulsed laser deposition, A3. Quantum well, B1. ZnMgO, B2. Semiconducting II-VI materials",

author = "Gu, {X. Q.} and Zhu, {L. P.} and Ye, {Z. Z.} and He, {H. P.} and F. Liu and W. Jaeger and Chu, {P. K.} and Qiu, {M. X.} and Zhang, {Y. Z.} and Huang, {J. Y.}",

year = "2008",

month = aug,

doi = "10.1016/j.spmi.2008.06.002",

language = "English",

volume = "44",

pages = "197--202",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "2",

}

TY - JOUR

T1 - Structure and optical properties of ZnO/ZnMgO multi-quantum wells grown on Si(111) substrates

AU - Gu, X. Q.

AU - Zhu, L. P.

AU - Ye, Z. Z.

AU - He, H. P.

AU - Liu, F.

AU - Jaeger, W.

AU - Chu, P. K.

AU - Qiu, M. X.

AU - Zhang, Y. Z.

AU - Huang, J. Y.

PY - 2008/8

Y1 - 2008/8

N2 - A series of ZnO/Zn1-xMgxO multi-quantum wells (MQWs) were grown on Si(111) substrates by pulsed laser deposition (PLD), with different well widths and depths. Transmission electron microscopy (TEM) analysis revealed that all the samples exhibited a good periodic structure with clear interfaces. Moreover, temperature- dependent behavior of excitonic photoluminescence (PL) was investigated in order to investigate the mechanism of the carrier dynamics. In the temperature range studied, the luminescence was dominated by localized exciton (LE) emission, which was significantly blueshifted with respect to the ZnO single layer, due to the well-known quantum-size effect. The blueshift values increased with elevating Mg compositions in barrier layers or decreasing well thickness, being consistent with the calculated results. The relevant activation energies were deduced, varying in a range of 6.2 to 22 meV. © 2008 Elsevier Ltd. All rights reserved.

AB - A series of ZnO/Zn1-xMgxO multi-quantum wells (MQWs) were grown on Si(111) substrates by pulsed laser deposition (PLD), with different well widths and depths. Transmission electron microscopy (TEM) analysis revealed that all the samples exhibited a good periodic structure with clear interfaces. Moreover, temperature- dependent behavior of excitonic photoluminescence (PL) was investigated in order to investigate the mechanism of the carrier dynamics. In the temperature range studied, the luminescence was dominated by localized exciton (LE) emission, which was significantly blueshifted with respect to the ZnO single layer, due to the well-known quantum-size effect. The blueshift values increased with elevating Mg compositions in barrier layers or decreasing well thickness, being consistent with the calculated results. The relevant activation energies were deduced, varying in a range of 6.2 to 22 meV. © 2008 Elsevier Ltd. All rights reserved.

KW - A3. Pulsed laser deposition

KW - A3. Quantum well

KW - B1. ZnMgO

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=47649121723&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-47649121723&origin=recordpage

U2 - 10.1016/j.spmi.2008.06.002

DO - 10.1016/j.spmi.2008.06.002

M3 - RGC 21 - Publication in refereed journal

SN - 0749-6036

VL - 44

SP - 197

EP - 202

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

Structure and optical properties of ZnO/ZnMgO multi-quantum wells grown on Si(111) substrates

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