Structure analysis of cBN films prepared by DC jet plasma CVD from an Ar-N2-BF3-H2 gas system

W. J. Zhang, S. Matsumoto*, K. Kurashima, Y. Bando

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

37 Citations (Scopus)

Abstract

The structure of the cBN films deposited by DC jet plasma CVD from an Ar-N2-BF3-H2 gas system was investigated by transmission electron microscopy and electron-energy-loss spectroscopy. A sequent layered-structure of Si/amorphous/hexagonal/cubic BN was revealed, which was also confirmed by the confocal Raman technique. For comparison, the phase composition, crystal size and crystallinity of cBN films deposited for different times at initial growth stage were studied by infrared spectroscopy, Raman spectroscopy and glancing-angle X-ray diffraction. A columnar growth of the cBN grains with the average column width of approximately 0.2 μm was observed. The columns were proved to be cBN single crystals elongated from the nucleation sites on the hexagonal BN to the film surface. High-density twins and stacking faults were observed on the (111) planes of the cBN crystals, which subdivided the crystals into many lamellae of several to about 20 nm in thickness. © 2001 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1881-1885
JournalDiamond and Related Materials
Volume10
Issue number9-10
Online published21 Aug 2001
DOIs
Publication statusPublished - Sept 2001
Externally publishedYes

Research Keywords

  • Boron nitride
  • Confocal Raman
  • Defects
  • EELs
  • Film structure
  • Grain size
  • TEM

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