Structural properties of Ge nano-crystals embedded in SiO2 films from X-ray diffraction and Raman spectroscopy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • A. G. Rolo
  • M. I. Vasilevskiy
  • O. Conde
  • M. J M Gomes

Detail(s)

Original languageEnglish
Pages (from-to)58-62
Journal / PublicationThin Solid Films
Volume336
Issue number1-2
Publication statusPublished - 30 Dec 1998
Externally publishedYes

Abstract

SiO2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique. The films were studied by means of X-ray diffraction (XRD) and Raman spectroscopy. XRD studies revealed diamond structure of Ge particles in the films grown at temperatures higher than 500°C. The dependence of the average size of Ge nanocrystals, determined by fitting the X-ray spectra (13-63 Å), on the substrate temperature, r.f.-power and the fraction of semiconductor in the target was determined. For higher-temperature grown films containing crystalline Ge particles, a pronounced peak due to confined optical phonons was observed in Raman spectra, while for those grown at lower temperature, there is just a broad band seen below 300 cm-1. A theoretical model is applied to describe the contribution of optical phonons confined in small Ge spheres. © 1998 Elsevier Science S.A. All rights reserved.

Research Area(s)

  • Germanium, Nanocrystals, r.f.-sputtering, Raman spectroscopy, X-ray diffraction

Citation Format(s)

Structural properties of Ge nano-crystals embedded in SiO2 films from X-ray diffraction and Raman spectroscopy. / Rolo, A. G.; Vasilevskiy, M. I.; Conde, O.; Gomes, M. J M.

In: Thin Solid Films, Vol. 336, No. 1-2, 30.12.1998, p. 58-62.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal