Structural properties of Ge nano-crystals embedded in SiO2 films from X-ray diffraction and Raman spectroscopy
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 58-62 |
Journal / Publication | Thin Solid Films |
Volume | 336 |
Issue number | 1-2 |
Publication status | Published - 30 Dec 1998 |
Externally published | Yes |
Link(s)
Abstract
SiO2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique. The films were studied by means of X-ray diffraction (XRD) and Raman spectroscopy. XRD studies revealed diamond structure of Ge particles in the films grown at temperatures higher than 500°C. The dependence of the average size of Ge nanocrystals, determined by fitting the X-ray spectra (13-63 Å), on the substrate temperature, r.f.-power and the fraction of semiconductor in the target was determined. For higher-temperature grown films containing crystalline Ge particles, a pronounced peak due to confined optical phonons was observed in Raman spectra, while for those grown at lower temperature, there is just a broad band seen below 300 cm-1. A theoretical model is applied to describe the contribution of optical phonons confined in small Ge spheres. © 1998 Elsevier Science S.A. All rights reserved.
Research Area(s)
- Germanium, Nanocrystals, r.f.-sputtering, Raman spectroscopy, X-ray diffraction
Citation Format(s)
Structural properties of Ge nano-crystals embedded in SiO2 films from X-ray diffraction and Raman spectroscopy. / Rolo, A. G.; Vasilevskiy, M. I.; Conde, O.; Gomes, M. J M.
In: Thin Solid Films, Vol. 336, No. 1-2, 30.12.1998, p. 58-62.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review