Structural properties of Ge nanocrystals embedded in sapphire

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • I. D. Sharp
  • Q. Xu
  • D. O. Yi
  • C. W. Yuan
  • J. W. Beeman
  • J. W. Ager III
  • D. C. Chrzan
  • E. E. Haller

Detail(s)

Original languageEnglish
Article number114317
Journal / PublicationJournal of Applied Physics
Volume100
Issue number11
Publication statusPublished - 2006
Externally publishedYes

Abstract

Isotopically pure Ge74 nanocrystals were formed in a sapphire matrix by the ion beam synthesis method. In contrast to those embedded in amorphous silica, sapphire-embedded nanocrystals are clearly faceted and are preferentially oriented with respect to the crystalline matrix. In situ transmission electron microscopy of heated samples reveals that the nanocrystals melt at 955±15 °C, very near to the bulk Ge melting point. The Raman spectra indicate that the sapphire-embedded Ge nanocrystals are under compressive stress in the range of 3-4 GPa. The magnitude of the stress is consistent with that expected for hydrostatic pressure arising from solidification. Stress relaxation was not observed for sapphire-embedded Ge nanocrystals; this is attributed to the slow self-diffusion rate of the alumina matrix atoms at temperatures below the nanocrystal melting point. © 2006 American Institute of Physics.

Citation Format(s)

Structural properties of Ge nanocrystals embedded in sapphire. / Sharp, I. D.; Xu, Q.; Yi, D. O. et al.
In: Journal of Applied Physics, Vol. 100, No. 11, 114317, 2006.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review